漫谈B_(17)——奇异的抗癌物质

<正> 日常生活中,B族的维生素是人们所熟悉的。例如B_1、B_2、B_4、B_6和B_(12)等,凡缺乏B族维生素就会使人们患各种维生素缺乏症。近年来国际上又发现了一种新的B族成员即B_(17),它的发现使人们充满了对癌症防治的信心,为防癌、抗癌药物增添了一朵奇葩。食品中有哪些含有B_(17),据记载有水果类、藻类、植物叶和鳖类 一、杏子:话还得从头说起,在南太平洋中有一个斐济岛国。该国气候终年如春,以盛产杏子

Comparative responses in rare minnow exposed to 17 beta-estradiol during different life stages

Present in the excrement of humans and animals, 17 beta-estradiol (E-2) has been detected in the aquatic environment in a range from several nanograms to several hundred nanograms per liter. In this study, the sensitivities of rare minnows during different life stages to E-2 at environmentally relevant (5, 25, and 100 ng l(-1)) and high (1000 ng l(-1)) concentrations were compared using vitellogenin (VTG) and gonad development as biomarkers under semistatic conditions. After 21 days of exposure, VTG concentrations in whole-body homogenates were analyzed; the results indicated that the lowest observed effective concentration for VTG induction was 25 ng l(-1) E-2 in the adult stage, but 100 ng l(-1) E-2 in the larval and juvenile stages. After exposure in the early life stage, the larval and juvenile fish were transferred to clean water until gonad maturation. No significant difference in VTG induction was found between the exposure and control groups in the adults. However, a markedly increased proportion of females and appearance of hermaphrodism were observed in the juvenile-stage group exposed to 25 ng l(-1) E-2. These results showed that VTG induction in the adult stage is more sensitive than in larval and juvenile stages following exposure to E-2. The juvenile stage may be the critical period of gonad development. Sex ratio could be a sensitive biomarker indicating exposure to xenoestrogens in early-life-stage subchronic exposure tests. The results of this study provide useful information for selecting sensitive biomarkers properly in aquatic toxicology testing.

Degradation of 17 alpha-ethinylestradiol in aqueous solution by ozonation

This study investigates the ozonation of 17 alpha-ethinylestradiol (EE2) in aqueous solution. The affecting factors on the degradation of EE2 were studied and described in details, such as initial EE2 concentration, initial pH value and ozone concentration. In addition, some parameters such as pH. electrical conductivity, mineralization efficiency and degradation products were monitored during the process. The mineralization efficiency of EE2 could reach 53.9%. During the ozonation process the rapid decrease of pH and the sharp increase of electrical conductivity indicated the fort-nation of acidic by-products, small fragments and ions which were confirmed by high performance liquid chromatography (HPLC) and gas chromatography-mass spectrometry (GUMS) analysis. Results showed that there were intermediate products of smaller molecule with higher polarity produced during the course of EE2 degradation. Then a possible reaction pathway for EE2 degradation involving all intermediates detected is proposed. During the ozonation process EE2 was first oxidized into hydroxyl-semiquinone isomers which were subsequently degraded into low molecular weight compounds such as oxalic acid, malonate, glutarate, and so on. Furthermore. these organic acids are easily oxidized by ozone into carbon dioxide (CO2). This work shows that ozonation process is promising for the removal of EE2. The results can provide some useful information for the potential treatment of EE2 by ozonation in aqueous solution. (c) 2005 Elsevier B.V. All rights reserved.

Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

This paper reports that lnAs/In0.53Ga0.47As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm(2) has been obtained for diodes with AlAs barriers of ten monolayers, and an In0.53Ga0.47As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

丙型肝炎病毒(HCV)株的全基因组序列测定: 完成HCV 基因型6 全套17 个亚型基因组的测序

丙型肝炎病毒（Hepatitis C virus, HCV）的全基因组序列测定，曾经由于许多方面 的条件限制而难于完成。但是，其对于研究HCV 分子病毒学、流行病学、进化和致 病性却至关重要，特别是在临床应用中，不同序列的基因型决定α-干扰素治疗的不同 效果。在本研究完成之前，HCV 基因型6 仅有6 个亚型有其全基因组序列。因此， 本研究的主要目的在于，测定HCV 变异株代表基因型6 其余的11 个亚型和新亚型的 全基因组序列，并深入分析。 本研究从样品分别来自于中国、泰国，和在美国及加拿大生活的东南亚国家移民 的HCV 感染者。因为样品有限，改良传统的PCR 方法，摸索出“桥”和“岛”DNA 全序列扩增法，从每例样品100μl 血清或从100μl 血清中获得的cDNA 中测定了13 个HCV 全基因组核苷酸序列。 以来源于Genbank 的已知基因型6 的七个全长序列为参考对所测定的13 个亚型 全序列进行共同分析显示，这些全基因组核苷酸的两两比较相似率变化范围为 71.9%--82.7%，著地， 这四对序列间的相同率高于标准定义的HCV 基因亚型之间的 范围值75%-80%。为了进一步理解和证实这些亚型间的遗传相似性，本研究还测定 了代表这4 对亚型的病毒原型株的全基因序列，结果显示了相同的核苷酸水平上的变 异范围，这为HCV 基因亚型的分类提供了新的认识，亦强调了全长序列对于分类的 重要性。 从系统发育方面的分析证实，本研究所测得的13 个分离株都属于基因型6。在系 统发育树上，每个病毒株代表一个独立的枝。并形成了高度分化的HCV 基因型6 分 枝，从而清楚显示，各亚型的独立分布。本研究至此完成了基因型6 中17 个亚型的 全序列测定，而km41 和gz52557 因缺乏其临床上和流行病学上的多个感染病例的证 实，而继续保留其亚型未命名状态。结合来源于Los Alamos HCV database 的基因型6 的已知部分序列的变异株进一步分析，发现各相近亚型变异株均来自东南亚或东南亚国家移民，这提示了这些HCV 的相同感染源。 为了探讨HCV 夫妻间传播的可能性，本研究还测定了来自于泰国的两位感染 HCV 的献血员及其感染HCV 的配偶。这4 个基因序列C-0044 和C-0046 之间核苷 酸相同率为98.1%，而C-0185 和 C-0192 之间为97.8%。文献研究感染HCV 的夫妇 间的部分亚基因序列的相同率为96.3%至100%，本研究结果与此范围相符，并第一 次用全基因组序列提示了HCV 在夫妻间传播的可能性。 本研究还测定了基因型6 的另一个变异株的全基因组序列：HK6554，香港的某患 者，与上文中的GX004 一起，均为静脉吸毒者，并共同感染了HCV 和HIV-1。分析 结果还表明了一种趋势，即是在中国南方，基因亚型6e 有从以前的地方性传播方式 转为现有的流行性传播方式。这种转变可能由于静脉吸毒感染HCV 的人群的网络传 播而加快。 综上，本研究用传统PCR、简并引物结合链特异引物的方法有效地测定了共21 个病毒株的全基因序列。该方法也可用于其它分子流行病学的研究，特别在测定珍贵 的病毒序列然而样品量又受限时。本研究所测定的全基因组序列代表HCV 中最古老、 分化最多、地方性传播、又可能动物源性的基因型6 的全套17 个亚型。这有助于进 一步理解HCV 基因亚型的分类意义、更准确评价HCV 的进化和起源，亦有助于发 现HCV 新的变异株和提高临床诊断、治疗，为将来HCV 的流行及公众健康的预测、 预防和疫苗的制备奠定了坚实的分子遗传学基础。

准连续17 kW 808 nm GaAs/AlGaAs叠层激光二极管列阵

高功率激光二极管列阵广泛应用于抽运固体激光器.报道了17 kW GaAs/AlGaAs叠层激光二极管列阵的设计、制作过程和测试结果.为了提高器件的输出功率,一方面采用宽波导量子阱外延结构,降低腔面光功率密度,提高单个激光条的输出功率,通过金属有机物化学气相沉积(MOCVD)方法进行材料生长,经过光刻、金属化、镀膜等工艺制备1 cm激光条,填充密度为80%,单个激光条输出功率达100 W以上;另一方面器件采用高密度叠层封装结构,提高器件的总输出功率,实现了160个激光条叠层封装,条间距0.5 mm.经测试,器件输出功率达17kW,峰值波长为807.6 nm,谱线宽度为4.9 nm.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Electro-mass olfactory multi-sensor (EMMS)

For an olfactory sensor or electronic nose, the task is not only to detect the object concentration, but also to recognize it. It is well known that all the elements can be identified by their charge to mass ratio e(+)/m. We tried to imitate this principle for molecular recognition. Two kinds of sensors are used simultaneously in testing. One is quartz crystal microbalance (QCM) for detecting the change in mass, the other is interdigital electrode (IE) for detecting the change in conduction, as an electro-mass multi-sensor (EMMS). in this paper, the principle and the feasibility of this method are discussed. The preliminary results on the recognition of alcohol by EMMS coated with lipids are presented. Meanwhile, the multi-sensor can also be used as an instrument for research on some physico-chemistry problems. The change in conduction of coated membrane caused by one absorbed molecule is reported. It is found that when a QCM is coated with membrane, it still obeys the relationship Delta F (frequency change of QCM) = K Delta m (mass change of absorbed substance) and the proportional coefficient, K, depends not only on quartz properties but also on membrane characteristics as well. (C) 2000 Elsevier Science S.A. All rights reserved.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Epitaxial growth of GaNAs/GaAs heterostructure materials

A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.