Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
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2002
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Resumo |
Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved. Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:13导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:13Z (GMT). No. of bitstreams: 1 2875.pdf: 183847 bytes, checksum: cd02b7f055137c68c6bdf0f2a5f3ff35 (MD5) Previous issue date: 2002 Hebei Semicond Res Inst, Shijiazhuang 050002, Hebei, Peoples R China; Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
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Idioma(s) |
英语 |
Publicador |
ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND |
Fonte |
Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY .Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers .见:ELSEVIER SCIENCE SA .MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91,PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,2002,521-524 |
Palavras-Chave | #半导体材料 #indium phosphide #semi-insulating #annealing #PICTS #photoluminescence #SEMIINSULATING INP #INDIUM-PHOSPHIDE #FE #PHOTOLUMINESCENCE #TEMPERATURE |
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会议论文 |