Adiabatic shear localization: occurrence, theories, and applications

On the origin of shear banding instability in metallic glasses

To uncover the physical origin of shear-banding instability in metallic glass (MG), a theoretical description of thermo-mechanical deformation of MG undergoing one-dimensional simple shearing is presented. The coupled thermo-mechanical model takes into account the momentum balance, the energy balance and the dynamics of free volume. The interplay between free-volume production and temperature increase being two potential causes for shear-banding instability is examined on the basis of the homogeneous solution. It is found that the free-volume production facilitates the sudden increase in the temperature before instability and vice versa. A rigorous linear perturbation analysis is used to examine the inhomogeneous deformation, during which the onset criteria and the internal length and time scales for three types of instabilities, namely free-volume softening, thermal softening and coupling softening, are clearly revealed. The shear-banding instability originating from sole free-volume softening takes place easier and faster than that due to sole thermal softening, and dominates in the coupling softening. Furthermore, the coupled thermo-mechanical shear-band analysis does show that an initial slight distribution of local free volume can incur significant strain localization, producing a shear band. During such a localization process, the local free-volume creation occurs indeed prior to the increase in local temperature, indicating that the former is the cause of shear localization, whereas the latter is its consequence. Finally, extension of the above model to include the shear-induced dilatation shows that such dilatation facilitates the shear instability in metallic glasses.

A Dynamic Model For Ice-Induced Vibration Of Structures

A dynamic model for the ice-induced vibration (IIV) of structures is developed in the present study. Ice properties have been taken into account, such as the discrete failure, the dependence of the crushing strength on the ice velocity, and the randomness of ice failure. The most important prediction of the model is to capture the resonant frequency lock-in, which is analog to that in the vortex-induced vibration. Based on the model, the mechanism of resonant IIV is discussed. It is found that the dependence of the ice crushing strength on the ice velocity plays an important role in the resonant frequency lock-in of IIV. In addition, an intermittent stochastic resonant vibration is simulated from the model. These predictions are supported by the laboratory and field observations reported. The present model is more productive than the previous models of IIV.

Transmission spectrum of a double quantum-dot-nanocavity system in photonic crystals

We investigate the optical transmission properties of a combined system which consists of two quantum-dot-nanocavity subsystems indirectly coupled to a waveguide in a planar photonic crystal. A Mollow-like triplet and the growth of sidebands are found, reflecting intrinsic optical responses in the complex microstructure.

Tunable high-order harmonic generation and the role of the folded quantum path

We theoretically demonstrate the selective enhancement of high-order harmonic generation (HHG) in two-color laser fields consisting of a single-cycle fundamental wave (800 nm wavelength) and a multicycle subharmonic wave (2400 nm wavelength). By performing time-frequency analyses based on a single-active-electron model, we reveal that such an enhancement is a result of the modified electron trajectories in the two-color field. Furthermore, we show that selectively enhanced HHG gives rise to a bandwidth-controllable extreme ultraviolet supercontinuum in the plateau region, facilitating the generation of intense single isolated attosecond pulses.

Quantum information processing in the wall of cytoskeletal microtubules

Microtubules (MT) are composed of 13 protofilaments, each of which is a series of two-state tubulin dimers. In the MT wall, these dimers can be pictured as "lattice" sites similar to crystal lattices. Based on the pseudo-spin model, two different location states of the mobile electron in each dimer are proposed. Accordingly, the MT wall is described as an anisotropic two-dimensional (2D) pseudo-spin system considering a periodic triangular "lattice". Because three different "spin-spin" interactions in each cell exist periodically in the whole MT wall, the system may be shown to be an array of three types of two-pseudo-spin-state dimers. For the above-mentioned condition, the processing of quantum information is presented by using the scheme developed by Lloyd.

The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy

The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

Tuning photoluminescence of single InAs quantum dot by electric field

By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of PL peak wave length. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blue shift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.

Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells

Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of InGaN multiple quantum wells (MQWs) are investigated. It is found that the EL intensity increases with the number of satellite peaks in the x-ray diffraction experiments of InGaN MQW samples. It is indicated that the rough interface will lead the reduction of EL intensity of InGaN MQW samples. It is also found that the EL intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. It is suggested that the EL intensity of InGaN MQWs can be improved by decreasing the interface roughness and dislocation density.