Tuning photoluminescence of single InAs quantum dot by electric field
| Data(s) |
2010
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| Resumo |
By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-1-n structure have been studied under an applied electric field With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05T07:10:45Z No. of bitstreams: 1 Tuning photoluminescence of single InAs quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05T07:42:58Z (GMT) No. of bitstreams: 1 Tuning photoluminescence of single InAs quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (MD5) Made available in DSpace on 2010-07-05T07:42:58Z (GMT). No. of bitstreams: 1 Tuning photoluminescence of single InAs quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (MD5) Previous issue date: 2010 Project supported by the National Natural Science Foundation of China (Grant No 60676054) 其它 Project supported by the National Natural Science Foundation of China (Grant No 60676054) |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
Chang XY (Chang Xiu-Ying), Dou XM (Dou Xiu-Ming), Sun BQ (Sun Bao-Quan), Xiong YH (Xiong Yong-Hua), Ni HQ (Ni Hai-Qiao), Niu ZC (Niu Zhi-Chuan) .Tuning photoluminescence of single InAs quantum dot by electric field .ACTA PHYSICA SINICA,2010,59(6):4279-4282 |
| Palavras-Chave | #半导体物理 #single InAs quantum dot #Stark effect #electron-hole separation |
| Tipo |
期刊论文 |
