The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots
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2010
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| Resumo |
The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17T01:12:37Z No. of bitstreams: 1 The effect of an electric field on the nonlinear response of InAs-GaAs quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17T01:29:06Z (GMT) No. of bitstreams: 1 The effect of an electric field on the nonlinear response of InAs-GaAs quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (MD5) Made available in DSpace on 2010-08-17T01:29:07Z (GMT). No. of bitstreams: 1 The effect of an electric field on the nonlinear response of InAs-GaAs quantum dots.pdf: 305285 bytes, checksum: a20c52fe0f1d96c23c4dd83421e6b204 (MD5) Previous issue date: 2010 This work was supported by the National Natural Science Foundation of China (Nos 10674131, 60625405 and 10734060). 其它 This work was supported by the National Natural Science Foundation of China (Nos 10674131, 60625405 and 10734060). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Huang X (Huang X.), Zhang XH (Zhang X. H.), Zhu YG (Zhu Y. G.), Li T (Li T.), Han LF (Han L. F.), Shang XJ (Shang X. J.), Ni HQ (Ni H. Q.), Niu ZC (Niu Z. C.).The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots.JOURNAL OF OPTICS,2010,12(5):Art. No. 055203 |
| Palavras-Chave | #半导体物理 #InAs quantum dots #nonlinear refraction #reflection Z-scan #dc electric field effect #ELECTROOPTIC PROPERTIES #SATURABLE ABSORBER #OPTICAL-PROPERTIES #WELL STRUCTURES #SINGLE-BEAM #BAND-GAP #ELECTROABSORPTION #ABSORPTION #REFLECTION #DEPENDENCE |
| Tipo |
期刊论文 |
