Field emission from the structure of well-aligned TiO2/Ti nanotube arrays

Well-aligned TiO2/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anoclization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anoclization voltage. The peaks at 25.3 degrees and 48.0 degrees of X-ray diffraction pattern illuminate that the TiO2 nanotube arrays annealed at 500 degrees C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/mu m, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm(2) were obtained. The emission current (2.3 mA/cm(2) at 18.8 V/mu m) was quite stable within 480 min. The results show that the FE properties of TiO2/Ti have much relation to the structure parameters.

Synthesis and field emission of diamond-like carbon nanorods on TiO2/Ti nanotube arrays

Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.

Modification of Fe/Cu Multilayers under 2-MeV Xe20+ Irradiation

Multilayers with a structure of Si/[Fe(10 nm)/CU(10 nm)](5) were deposited on Si(100) substrates and then irradiated at room temperature by using 2-MeV Xe20+. The modifications of the multilayers were characterized using a depth profile analysis of the Auger electron spectroscopy (AES) data and the evolution of crystallite structures of the multilayers were analyzed by using X-ray diffraction (XRD). The AES depth profiles indicated that de-mixing of the Fe and the Cu layers was observed at low ion fluences, but inter-mixing of the Fe and the Cu layers was found at high ion fluences and destroyed the layered structure of the multilayers. The obtained XRD patterns showed that, after irradiation by 2-MeV Xe20+ at; 2 x 10(16) ions/cm(2), the peaks of the multilayers related to a Cu-based fee solid solution and an Fe-based bee solid solution phase became visible, which implied that the inter-mixing at the Fe/Cu interface resulted in the formation of new phases. A possible mechanism of modification in the Fe/Cu multilayers induced by ion irradiation is briefly discussed.

Systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses

A systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses can help single out effects of the nuclear mean field on pion production. Based on simulations using the IBUU04 transport model, it is found that the pi(-)/pi(+) ratio in head-on collisions of Ca-48 + Ca-48, Sn-124 + Sn-124, and Au-197 + Au-197 at beam energies from 0.25 to 0.6 GeV/nucleon increases with increasing the system size or decreasing the beam energies. A comprehensive analysis of the dynamical isospin fractionation and the pi(-)/pi(+) ratio as well as their time evolution and spatial distributions demonstrates clearly that the pi(-)/pi(+) ratio is an effective probe of the high-density behavior of the nuclear symmetry energy.

高电荷态离子126Xeq+引起GaN表面形貌变化研究

用不同电荷态的126Xeq+离子（9≤q≤30）在室温下轰击GaN晶体表面，经原子力显微镜分析表明，当q>18，辐照区域由隆起转为显著的刻蚀.被轰击后的GaN晶体表面形貌主要取决于入射离子的电荷态.同时，样品表面形貌还与入射离子的剂量和入射角有关；在实验参数范围，与入射离子的初动能没有明显关系（180 keV≤Ek≤600 keV）.当入射离子的电荷态q=18，与样品表面法线成60°角倾斜入射和垂直表面入射时，样品的表面几乎没有变化，只是倾斜入射后有很微小的隆起；当q＜18时，样品表面膨胀隆起，粗糙度增强，倾斜入射时表面隆起比垂直入射时更明显，而且都有清晰的峰状分界区；当q＞18时，样品表面被蚀刻呈凹陷状，有明显的齿状刻痕，且侵蚀深度与离子剂量近似呈线性关系，倾斜入射时的刻蚀深度大于垂直入射时的刻蚀深度.

Rapid detection of porcine circovirus type 2 by loop-mediated isothermal amplification

A method of loop-mediated isothermal amplification (LAMP) was employed to develop a rapid and simple detection system for porcine circovirus type 2 (PCV2). The amplification could be finished in 60 min under isothermal condition at 64 degrees C by employing a set of four primers targeting the cap gene of PCV2. The LAMP assay showed higher sensitivity than the conventional PCR, with a detection limit of five copies per tube of purified PCV2 genomic DNA. No cross-reactivity was observed from the samples of other related viruses including porcine circovirus type 1 (PCV1), porcine parvovirus (PPV), porcine pseudorabies virus (PRV) and porcine reproductive and respiratory syndrome virus (PRRSV). The detection rate of PCV2 LAMP for 86 clinical samples was 96.5% and appeared greater than that of the PCR method. The LAMP assay reported can provide a rapid yet simple test of PCV2 suitable for laboratory diagnosis and pen-side detection due to ease of operation and the requirement of only a regular water bath or heat block for the reaction. (c) 2008 Elsevier B.V. All rights reserved.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

Beam dynamics design of an RFQ for a planned accelerator, which uses a direct plasma injection scheme

To meet the requirements of providing high-intensity heavy ion beams the direct plasma injection scheme (DPIS) was proposed by a RIKEN-CNS-TIT collaboration. In this scheme a radio frequency quadrupole (RFQ) was joined directly with the laser ion source (LIS) without a low-energy beam transport (LEBT) line. To find the best design of the RFQ that will have short length, high transmission efficiency and small emittance growth, beam dynamics designs with equipartitioning design strategy and with matched-only design strategy have been performed, and a comparison of their results has also been done. Impacts of the input beam parameters on transmission efficiency are presented, too. (C) 2008 Elsevier B.V. All rights reserved.

Effects of helium and oxygen common implantation in silicon wafer

Defect engineering for SiO2] precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen (STMOX). Cavities are created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120keV 8.0 x 10(16) cm(-2) O ions. The O ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectional transmission electron microscopy (XTEM), Fourier transform infrared absorbance spectrometry (FTIR) and atomic force microscopy (AFM) measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.

铝镁尖晶石中He离子注入引起损伤的退火行为研究

利用卢瑟福沟道背散射技术结合表面的原子力显微分析，对注He的铝镁尖晶石晶体的晶格损伤及表面形变随退火温度变化的关系进行了研究.结果表明，不同注入剂量的样品中晶格损伤和表面形变表现出显著不同的退火行为.分析认为造成损伤演化的这种差异与注入的He原子在晶体中不同的聚集状态有关.

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar+后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar+注入后，其光致发光谱中均出现了新的位于506nm处的发光峰；真空和空气气氛下的退火均对样品在506nm处的发光有增强作用，不同晶面取向的样品发光增强程度不同，且发光增强至最大时的退火温度也不同，空气气氛下的退火使样品发光增强程度更为显著.由此可以看出，退火气氛、退火温度和晶面取向均对样品发光峰强度有影响.