Photoluminescence character of Xe ion irradiated sapphire
| Data(s) |
2008
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|---|---|
| Resumo |
In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Yin, S (Yin, Song); Er-Qing, X (Er-qing, Xie); Chong-Hong, Z (Chong-hong, Zhang); Zhi-Guang, W (Zhi-guang, Wang); Li-Hong, Z (Li-hong, Zhou); Yi-Zhong, M (Yi-Zhong, Ma); Cun-Feng, Y (Cun-feng, Yao); Hang, Z (Hang, Zang); Chun-Bao, L (Chun-bao, Liu); Yan-Bin, S (Yan-bin, Sheng); Jie, G (Jie, Gou) .Photoluminescence character of Xe ion irradiated sapphire, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2008,266(12-13):2998-3001 |
| Palavras-Chave | #ion implantation #ion irradiation #Al2O3 #PL spectra |
| Tipo |
期刊论文 |
