离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展。指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等。并指出了该研究领域的研究方向。

Electric field distribution in resonant reflection filters under normal incidence

Electric field distributions inside resonant reflection filters constructed using planar periodic waveguides are investigated in this paper. The electric fields may be intensified by resonance effects. Although the resonant reflection peaks can be quite narrow using weakly modulated planar periodic waveguides, the strong electric field enhancement limits their use in high-power laser systems. Strongly modulated waveguides may be used to reduce the electric field enhancement and a cover layer may be used to narrow the bandwidth at the same time. Desired results (i.e. almost no electric field enhancement together with narrow bandwidth) can be realized using this simple structure.

Influence of substoichiometer on the laser-induced damage characters of HfO2 thin films

HfO2 is one of the most important high refractive index materials for depositing high power optical mirrors. In this research, HfO2 thin films were prepared by dual-ion beam reactive sputtering method, and the laser-induced damage thresholds (LIDT) of the sample were measured in 1-on-1 mode for laser with 1064 nm wavelength. The results indicate that the LIDT of the as-grown sample is only 3.96 J/cm(2), but it is increased to 8.98 J/cm(2) after annealing under temperature of 200 degrees C in atmosphere. By measuring the laser weak absorption and SIMS of the samples, we deduced that substoichiometer is the main reason for the low LIDT of the as-grown sample, and the experiment results were well explained with the theory of electronic-avalanche ionization. (C) 2008 Elsevier B.V. All rights reserved.

大功率微波与臭氧等复合因子对大棚蔬菜根结线虫及土壤的作

虫（nematodes）是世界农业生产的一大障碍，每年给世界农业生产造成约1000亿美元的巨额损失，是世界各国一直关注的重点病害之一。线虫可以危害各种大田作物和各种温室植物，几乎所有的栽培植物都有线虫危害发生。随着人们环保意识的增强以及健康意识的觉醒，传统防治根结线虫的药物如溴甲烷等因对环境的破坏作用，或者由于高毒、使用不便、抗药性等原因而迅速退出历史舞台，研究环保高效防治线虫成为世界各国竞相发展的技术之一。本研究尝试通过物理方式防治蔬菜根结线虫，并调查了对土壤质量的影响，主要内容包括： 1. 设计制造了功率20 Kw，频率为915 MHz的大功率土壤微波处理机，并通过了田间试验; 2. 设计制造了每小时120 g臭氧产量的便携式臭氧土壤处理机，并通过了田间试验; 3. 采用4因素3水平正交法L9(34)在山东寿光蔬菜大棚进行了蔬菜根结线虫的防治试验，综合考察微波、臭氧、微波吸收剂、EM菌等不同处理水平对根结线虫和对土壤质量的影响，结果表明： 1) 大棚土壤经微波60 s照射能够显著降低甜瓜根结线虫数和根结指数（p < 0.05），盆栽试验只需处理10 s即可显著防治甜瓜根结线虫（p < 0.01）;以120 g/h臭氧浓度处理5 s也能显著降低甜瓜根结线虫的数量（p < 0.05）;田间施入5 g/m2的EM菌，能够显著降低甜瓜根结线虫的数量（p < 0.05）;盆栽试验中微波吸收剂具有降低根结线虫数量的趋势，但是不同处理水平之间差异不显著，田间试验则具有增加根结线虫的趋势，不同处理水平之间也没有显著差异。 2) 微波不同处理水平之间对甜瓜单瓜重的影响没有显著差异;以120 g/h臭氧浓度处理甜瓜能够显著增加甜瓜单瓜重（p < 0.05）;200 g/m2微波吸收剂能够显著提高甜瓜单瓜重（p < 0.05）;以5 g/m2EM菌处理土壤则显著降低甜瓜单瓜重（p < 0.05）。 3) 微波、臭氧、微波吸收剂不同处理水平对甜瓜糖度的影响没有显著差异;以3 g/m2的EM菌处理甜瓜能够显著降低甜瓜的糖度。 4) 不同因素对甜瓜硬度的影响没有显著差异。 5) 微波处理60 s能够显著提高甜瓜的果型指数（p < 0.1），臭氧、微波吸收剂、EM菌等因素不同处理水平之间对果型指数影响差异不显著。 6) EM菌5 g/m2处理浓度能够显著降低甜瓜株高（p < 0.1），微波、臭氧、微波吸收剂不同处理水平之间对株高的影响没有显著差异。 7) EM菌5 g/m2处理浓度能够显著降低甜瓜根径（p < 0.1），微波、臭氧、微波吸收剂不同处理水平之间对根径的影响没有显著差异。 8) 微波处理60 s能够显著降低表层土壤（0-5 cm）的有机质含量（p < 0.01）;以120 g/h的臭氧浓度处理，则可以显著提高10-15 cm土壤的有机质含量（p < 0.05），其它处理因素的不同水平对有机质的影响差异不显著。 9) 微波不同处理水平对土壤全氮的影响没有显著差异（p < 0.05）;120 g/h臭氧处理浓度能够显著降低表层土壤（0-5 cm）的土壤全氮量（p < 0.1）;100 g/m2微波吸收剂处理水平能够显著提高10-15 cm土壤全氮量（p < 0.05）;EM菌3 g/m2的处理水平则显著降低5-10 cm土壤全氮量（p < 0.05）。 10) 微波、微波吸收剂、EM菌不同处理水平之间对土壤全磷没有显著影响;240 g/h臭氧浓度处理5 s能够显著降低10-15 cm土层的土壤全磷含量(p < 0.05)。 11) 微波、微波吸收剂对土壤全磷没有显著影响;臭氧处理具有降低土壤有效磷的趋势，EM菌处理则有提高土壤有效磷的趋势，但是 不同处理水平之间差异不显著（p > 0.05）。 12) 微波处理对土壤EC值没有显著影响;臭氧、微波吸收剂、EM菌处理具有降低土壤EC值的趋势，但是不同处理水平之间差异不显著（p > 0.05）。 13) 微波处理30 s能够显著降低表层土壤的pH值（p < 0.05），臭氧、微波吸收剂、EM菌处理具有提高土壤pH值的趋势，但是不同处理水平之间差异不显著。

Investigation of mode radiation loss for microdisk resonators with pedestals by FDTD technique

Mode radiation loss for microdisk resonators with pedestals is investigated by three-dimensional (3D) finite-difference time-domain (FDTD) technique. For the microdisk with a radius of 1 mu m, a thickness of 0.2 mu m, and a refractive index of 3.4, on a pedestal with a refractive index of 3.17, the mode quality (Q) factor of the whispering-gallery mode (WGM) quasi-TE7,1 first increases with the increase of the radius of the pedestal, and then quickly decreases as the radius is larger than 0.75 mu m. The mode radiation loss is mainly the vertical radiation loss induced by the mode coupling between the WGM and vertical radiation mode in the pedestal, instead of the scattering loss around the perimeter of the round pedestal. The WG M can keep the high Q factor when the mode coupling is forbidden.

Mode coupling and vertical radiation loss for whispering-gallery modes in 3-D microcavities

The characteristics of whispering-gallery modes (WGMs) in 3-D cylindrical, square, and triangular microcavities with vertical optical confinement of semiconductors are numerically investigated by the finite-difference time-domain (FDTD) technique. For a microcylinder with a vertical refractive index 3.17/3.4/3.17 and a center layer thickness 0.2 mu m, Q-factors of transverse electric (TE) WGMs around wavelength 1550 nm are smaller than 10(3), as the radius R < 4 mu m and reach the orders of 10(4) and 10(6) as R = 5 and 6 mu m, respectively. However, the Q-factor of transverse magnetic (TM) WGMs at wavelength 1.659 mu m reaches 7.5 x 10(5) as R = 1 mu m. The mode coupling between the WGMs and vertical radiation modes in the cladding layer results in vertical radiation loss for the WGMs. In the microcylinder, the mode wavelength of TM WGM is larger than the cutoff wavelength of the vertical radiation mode with the same mode numbers, so TM WGMs cannot couple with the vertical radiation mode and have high Q-factor. In contrast, TE WGMs can couple with the corresponding vertical radiation mode in the 3-D microcylinder as R < 5 mu m. However, the mode wavelength of the TE WGM approaches (is larger than) the cutoff wavelength of the corresponding radiation modes at R = 5 mu m (6 mu m), so TE WGMs have high Q-factors in such microcylinders too. The results show that a critical lateral size is required for obtaining high, Q-factor TE WGMs in the 3-D microcylinder. For 3-D square and triangular microcavities, we also find that the Q-factor of TM WGM is larger than that of TE WGM.

Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions

(110) ZnO/(001) Nb-1 wt %-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (C) 2008 American Institute of Physics.

A Diode-Side-Pumped Dynamic Fundamental Mode Nd:YAG Laser

A fundamental mode Nd YAG laser is experimentally demonstrated with a stagger pumped laser module and a special resonator. The rod is pumped symmetrically by staggered bar modules. A dynamic fundamental mode is achieved with the special resonator under different pump levels. A maximal continuous wave output of 61 W (M-2 = 1.4) is achieved with a single rod. An average output of 47 W, pulse width of 54 ns, pulse energy of 4.7 mJ and peak power of 87 kW are obtained under the Q-switched operation of 10 kHz.

The junction temperature and forward voltage relationship of GaN-based laser diode

In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M (g) in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won't lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Defects around self-organized InAs quantum dots measured by slow positron beam

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy. The authors try to use a slow positron beam to detect defects in and around self-organized QDs, and point defects are observed in GaAs cap layer above QDs. For the self-organized InAs QDs without strain-reducing layer, it is free of defects. However, by introducing a strain-reducing layer, the density of point defects around larger sized InAs QDs increased. The above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in QD materials. (c) 2007 American Institute of Physics.

Effect of oxidation on the optical and surface properties of AlGaN

The chemical properties of AlxGa1-xN surfaces exposed to air for different time periods are investigated by atomic force microscopy (AFM), photoluminescence (PL) measurement and X-ray photoelectron spectroscopy (XPS). PL and AFM results show that AlxGa1-xN samples exhibit different surface characteristics for different air-exposure times and Al contents. The XPS spectra of the Al 2p and Ga 2p core levels indicate that the peaks shifted slightly, from an Al-N to an Al-O bond and from a Ga-N to a Ga-O bond. All of these results show that the epilayer surface contains a large amount of Ga and Al oxides. (c) 2006 Elsevier B.V. All rights reserved.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Mode-coupling analysis of three-dimensional microdisk resonators by the finite-difference time-domain technique

Quality factor enhancement due to mode coupling is observed in a three-dimensional microdisk resonator. The microdisk, which is vertically sandwiched between air and a substrate, with a radius of 1 mu m, a thickness of 0.2 mu m, and a refractive index of 3.4, is considered in a finite-difference time-domain (FDTD) numerical simulation. The mode quality factor of the fundamental mode HE71 decreases with an increase of the refractive index of the substrate, n(sub), from 2.0 to 3.17. However, the mode quality factor of the first-order mode HE72 reaches a peak value at n(sub) = 2.7 because of the mode coupling between the fundamental and the first-order modes. The variation of mode field distributions due to the mode coupling is also observed. This mechanism may be used to realize high-quality-factor modes in microdisks with high-refractive-index substrates. (c) 2006 Optical Society of America.