The junction temperature and forward voltage relationship of GaN-based laser diode
Data(s) |
2009
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Resumo |
In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M (g) in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won't lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liu YT ; Cao Q ; Song GF ; Chen LH .The junction temperature and forward voltage relationship of GaN-based laser diode ,LASER PHYSICS,2009 ,19(3):400-402 |
Palavras-Chave | #光电子学 #HIGH-POWER |
Tipo |
期刊论文 |