Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions
Data(s) |
2008
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Resumo |
(110) ZnO/(001) Nb-1 wt %-doped SrTiO3 n-n type heteroepitaxial junctions were fabricated using the pulse laser deposition method. A diodelike current behavior was observed. Different from conventional p-n junctions or Schottky diodes, the diffusion voltage was found to increase with temperature. At all temperatures, the forward current was perfectly fitted on the thermionic emission model. The band bending at the interface can qualitatively explain our results, and the extracted high ideality factor at low temperatures, as well as large saturation currents, is ascribed to the deep-level-assisted tunneling current through the junction. (C) 2008 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wu, YL ; Zhang, LW ; Xie, GL ; Zhu, JL ; Chen, YH .Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions ,APPLIED PHYSICS LETTERS,2008 ,92(1): Art. No. 012115 |
Palavras-Chave | #光电子学 #MANGANITE-BASED HETEROJUNCTION #SCHOTTKY CONTACTS #TUNNELING CURRENT #ZNO |
Tipo |
期刊论文 |