Effects of aniracetam on extracellular levels of transmitter amino acids in the hippocampus of the conscious gerbils: an intracranial microdialysis study

The effects of aniracetam on extracellular amino acid levels in the hippocampus of conscious gerbils, with or without transient cerebral ischemia/reperfusion, were measured by microdialysis and reverse phase-high performance liquid chromatography. Increased extracellular levels of aspartate and glutamate that were observed in the hippocampus of conscious gerbils during transient global forebrain ischemia were reversed by aniracetam. In contrast, the level of extracellular gamma-aminobutyric acid was increased, while taurine was maintained at a higher level than other amino acids by administration of aniracetam (100 mg/kg, p.o.) 60 min before ischemia. Further, in contrast to ischemic animals, administration of aniracetam (100 mg/kg, p.o.) enhanced the release of glutamate and aspartate in the normal gerbil hippocampus. The results suggest that these effects might be due to a partial calcium agonist activity of aniracetam, and that the effects of aniracetam on amino acid levels might be a mechanism of protection against delayed neuronal death in the ischemic hippocampus, thereby improving memory dysfunction induced by ischemia/reperfusion. (C) 2003 Elsevier Science Ireland Ltd. All rights reserved.

纤细裸藻褪色突变株的残留质体及其对核基因表达的影响

用氧氟沙星(Ofl)和链霉素(Sm)分别处理纤细裸藻获得褪色突变株,电子显微镜观察显示细胞中存在残留质体,其中一个Ofl突变株质体有原初类囊体膜形成,而两个Sm突变株质体内有异常致密、发达的膜结构。用PCR方法检查了质体DNA的9个基因,显示所有突变株均有核糖体蛋白基因丢失,其中一个Sm突变株仍保留质体DNA的大部分基因,其余突变株质体DNA则基本丢失。通过差异显示和RT-PCR方法证明叶绿体的退化在完全黑暗异养条件下也可导致某些核基因转录的变化。

白鱀豚核型的初步研究

<正> 对于豚类染色体核型,国外有过关于海豚类方面的研究,而关于淡水豚类迄今尚未见有报道。本文是对白鱀豚核型研究的初步结果。材料取自一头体长为1.97米的雄性白鱀豚“淇淇”。此豚自1980年元月12日以来一直饲养在本所的饲养池内。采用哺乳动物常规的外周血培养法,空气干燥制片,吉姆萨染色法。我们共分析9个中期相,对其中2个中期相进行了测量。根据它们的臂比按Laven命名法分为以下4组: M组,(具中着丝点染色体(Metacentric))r=1.00-1.67;SM组,(具亚中着丝点染色体(Submerce

湘华鲮(♂)×鲮鱼(♀)杂交一代与其双亲染色体组型的比较研究

三种鱼的二倍体数目完全相同,均为2n=50。三种鱼的核型差异较大,尤其是双亲间的组型在形态上有明显的差异。然而杂交一代的m、sm二组染色体的组型却十分接近母体,这二组的染色体数占了全部染色体总数的88%。杂交一代染色体组型中的st和t二组染色体虽与双亲有所不同,但与双亲中这二组染色体组型的差异来比要小一些。三种鱼的中期分裂相中,未曾发现带有随体的染色体,也未发现与性别有关的异型染色体的存在。

三种罗非鱼染色体组型的比较研究

本文对莫桑比克罗非鱼、尼罗罗非鱼、加俐俐罗非鱼的染色体组型进行了分析研究,并绘制了它们各自的核型模式图。所有这3种罗非鱼的二倍体染色体数目都是44,即2n=44。第1对染色体最长,第2对次之,其余20对均为大小差不多的染色体。它们的核型可分为3组,SM组4对,ST组17对,T组1对。3种罗非鱼的染色体组型形态基本相似,用常规染色体染色的方法难以区分。本文还讨论了罗非鱼的核型与进化问题。

Residual plastids of bleached mutants of Euglena gracilis and their effects on the expression of nucleus-encoded genes

Bleached mutants of Euglena gracilis were obtained by treatment with ofloxacin (Ofl) and streptomycin (Sm) respectively. As shown by electron microscopy, the residual plastids contain prothylakoids in an Ofl mutant, and the highly developed and tightly stacked membranous structure found in cells of two Sm, mutants. Nine genes of the plastid genome were examined with PCR, showing that ribosomal protein genes and most other plastid genes were lost in all but one Sm mutant. Using differential display and RT-PCR, it was shown that chloroplast degeneration could cause changes in transcription of certain nucleus-encoded genes during heterotrophic growth in darkness.

Construction and characterization of a novel recombinant single-chain variable fragment antibody against White Spot Syndrome Virus from shrimp

An antibody phage display library against White Spot Syndrome Virus (WSSV) was constructed. After four rounds of panning against WSSV, 192 out of 480 clones displayed WSSV binding activity. One of the positive clones, designated A1, had relatively higher activity specifically binding to WSSV A1-soluble, single-chain fragment variable (scFv) antibody has an affinity constant (K-aff) of 2.02 +/- 0.42 x 10(9) M-1. Dot blot assays showed that A1-soluble scFv could detect WSSV directly from shrimp hemolymph after 24-h feeding infection by WSSV. A1 scFv has potential for the development of a cheap, simple and sensitive diagnostic kit for WSSV in the field. (C) 2003 Elsevier Science B.V. All rights reserved.

HYDROGRAPHIC VARIATIONS IN SIZE STRUCTURE OF PLANKTON BIOMASS IN A CHANGJIANG FLOODPLAIN LAKE

The size structure of the planktonic community in a Changjiang floodplain lake (Lake Chenhu, Hubei, P. R. China) was described for the inundation period of May through September 1983. The modality of the Sheldon-type size distributions changed hydrographically with the spectral profiles being bimodal during low, rising, mid-high and falling water phases, and trimodal soon after filling and shortly before falling. The modal peaks corresponded respectively to the dominant organisms of chlorophytes and nauplii, while the troughs centered on the bacteria and macrocrustacean size classes in the lake. The slope of the normalized biomass spectrum (an index of plankton size distribution) was less than -1.0 for the filling and falling phases or close to -1.0 for the high water period, indicating that the planktonic biomass tended to decrease or evenly distributes across logarithmically ordered size classes, respectively. This observed variation in the size distribution of the plankton community mainly resulted from changes in water levels and contents of particulate inorganic matter (PIM) in the lake.

SESTON IN A SEASONALLY FLOODED LAKE OF THE CENTRAL CHANGJIANG RIVER (CHINA)

Seston was studied during inundation in a seasonally flooded lake of Changjiang River system (Lake Chenhu, Hanyang, P.R. China). Particulate organic matter (POM), particulate inorganic matter (PIM), particulate organic carbon (POC) and particulate organic nitrogen (PON) concentrations were highest upon initial inflow of river water, as a result of the riverine transport of allochthonous seston into the lake, and during the initial draining phase, coinciding with the postflood development of phytoplankton biomass and accumulation of detritus from the decomposition of the inundated vegetation grown during the preceding period of exposure. However seston concentrations were lowest shortly after the termination of flood inflow, presumably due to sedimentation and river water dilution. Seston food quality, based on POM : PIM, C : N and Algal-AFDW : POM ratios, was higher during the early high water phase than during the filling and draining phases.

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

To form low-resistance Ohmic contact to p-type GaN, InGaN/GaN multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to Ni/Au (5 nm/5 nm) film deposition. The surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. It is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-GaN layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. It suggests that the metal atoms of the Ni/Au transparent electrode of light emitting diode devices may diffuse into the p-GaN layer along threading dislocation lines and form additional leakage current channels. Therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition

This paper reports that Al1-xInxN epilayers were grown on GaN template by metalorganic chemical vapor deposition with an In content of 7%-20%. X-ray diffraction results indicate that all these Al1-xInxN epilayers have a relatively low density of threading dislocations. Rutherford backscattering/channeling measurements provide the exact compositional information and show that a gradual variation in composition of the Al1-xInxN epilayer happens along the growth direction. The experimental results of optical reflection clearly show the bandgap energies of Al1-xInxN epilayers. A bowing parameter of 6.5 eV is obtained from the compositional dependence of the energy gap. The cathodoluminescence peak energy of the Al1-xInxN epilayer is much lower than its bandgap, indicating a relatively large Stokes shift in the Al1-xInxN sample.