Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 mu m-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H-2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Omega center dot cm, 54 cm(2)/Vs, and 2.0x 10(17) cm(-3), respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10(-3) Omega center dot cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 mu m. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300 degrees C) show only a sharp peak at about 34.4 degrees corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4 degrees. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44 nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer

Hexagonal GaN films (similar to 3 mu m) were grown on 3c-SiC/Si(111) and carbonized Si(111) substrates using a thick AlN buffer Cracks are observed on the surface of the GaN film grown on the carbonized Si(111), while no cracks are visible on the 3c-SiC/Si(111). XRD exhibits polycrystalline nature of the GaN film grown on the carbonized Si(111) due to poorer crystalline quality of this substrate. Raman spectra reveal that all GaN layers are under tensile stress, and the GaN layer grown on 3c-SiC/Si(111) shows a very low stress value of sigma(xx) = 0.65 Gpa. In low-temperature Photoluminescence spectra the remarkable donor-acceptor-pair recombination and yellow band can be attributed to the incorporation of Si impurities from the decomposition of SiC.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces

The morphological defects and uniformity of 4H-SiC epilayers grown by hot wall CVD at 1500 degrees C on off-oriented (0001) Si faces are characterized by atomic force microscope, Nomarski optical microscopy, and Micro-Raman spectroscopy. Typical morphological defects including triangular defects, wavy steps, round pits, and groove defects are observed in mirror-like SiC epilayers. The preparation of the substrate surface is necessary for the growth of high-quality 4H-SiC epitaxial layers with low-surface defect density under optimized growth conditions. (c) 2006 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

n-ZnO/p-Si heterojunction light-emitting diodes (LEDs) show weak defect-related electroluminescence (EL). In order to analyze the origin of the weak EL, the energy band alignment and interfacial microstructure of ZnO/Si heterojunction are investigated by x-ray photoelectron spectroscopy. The valence band offset (VBO) is determined to be 3.15 +/- 0.15 eV and conduction band offset is -0.90 +/- 0.15 eV, showing a type-II band alignment. The higher VBO means a high potential barrier for holes injected from Si into ZnO, and hence, charge carrier recombination takes place mainly on the Si side rather than the ZnO layer. It is also found that a 2.1 nm thick SiOx interfacial layer is formed at the ZnO/Si interface. The unavoidable SiOx interfacial layer provides to a large number of nonradiative centers at the ZnO/Si interface and gives rise to poor crystallinity in the ZnO films. The weak EL from the n-ZnO/p-Si LEDs can be ascribed to the high ZnO/Si VBO and existence of the SiOx interfacial layer.

n-Si半导体作为光电化学分解水阳极的稳定性研究

单晶Si由于它的禁带宽度（1.1ev）与太阳光谱相匹配，作为光活性电极材料被广泛研究。但它作为光阳极不稳定，易腐蚀。所以提高单晶Si作为光阳极时的稳定性就成了关键问题。我们所采用的是在n-Si表面沉积保护膜的方法。首先用电沉积法在n-Si表面沉积一层Pd，光电流得到了很大的提高。从未沉积Pd前的2mA／cm~2增加到29.1mA／cm~2（电极电位在1.5V vs，SCE），并且稳定性增强，能在光电解水体系中稳定工作4小时，但4小时后光电流衰减，所以在n-Si表面沉积Pd有一定的保护作用，但保护作用是有限的。我们在n-Si/Pd电极上用化学沉积法再沉积一层锰的氧化物膜，大大提高了电极的稳定性，在0.5MKOH溶液中，电位控制在0.4V（vs.SCE）时，可以稳定工作110小时。化学沉积锰氧化物膜的烧结温度为250℃（在N_2或Ar保护下），得到的锰氧化物膜经X－射线光电子能谱确定锰的价态为＋3价。RuO_2在n-Si/Pd/Mn_2O_3表面的沉积对氧的析出有催化作用，与未沉积前相比不电流起始电位负移了0.15V，比氧析出可逆电位负80mV [氧析出中逆电位在0.5M KOH溶液中（pH＝13.7）为0.18v（vs.SCE）]，沉积RuO_2的n-Si/Pd/Mn_2O_3/RuO_2电极，也具有同样好的稳定性，连续工作112小时光电流无明显变化。由交流阻抗法求得它的平带电位为-0.5V vs.SCE （0.5M KOH溶液）和0.0V vs.SCE（0.5M K_2SO_4溶液），并由此进一步得出它在0.5M KOH溶液中的能级结构。据此分析了n-Si电极在不加偏压下不能实现水的光电化学分解的原因。由光谱响应实验结果得到。沉积保护膜后的n-Si电极在整个可见光及近红外区内仍然有较好的光吸收。由光电流起始波长1130nm计算出的禁带宽度为1.1eV，与文献值一致。

EFFECTS OF 1-MEV-ELECTRON IRRADIATION ON A-SI SOLAR-CELLS

In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cells. It is observed that in the dose range of 1.4-8.4 x 10(15) cm(-2) the defect creation has not reached its saturation level and the metastable defects caused by the irradiation cannot be completely removed by a two hour annealing at 200 degrees C for i a-Si:H films or at 130 degrees C for a-Si:H solar cells. The results may be understood in terms of a model based on two kinds of metastable defects created by 1 MeV-electron irradiation.

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

THEORY OF THE ELECTRONIC-STRUCTURE OF POROUS SI

A theoretical model for the electronic structure of porous Si is presented. Three geometries of porous Si (wire with square cross section, pore with square cross section, and pore with circular cross section) along both the [001] and [110] directions are considered. It is found that the confinement geometry affects decisively the ordering of conduction-band states. Due to the quantum confinement effect, there is a mixing between the bulk X and GAMMA states, resulting in finite optical transition matrix elements, but smaller than the usual direct transition matrix elements by a factor of 10(-3). We found that the strengths of optical transitions are sensitive to the geometry of the structure. For (001) porous Si the structure with circular pores has much stronger optical transitions compared to the other two structures and it may play an important role in the observed luminescence. For this structure the energy difference between the direct and the indirect conduction-band minima is very small. Thus it is possible to observe photoluminescence from the indirect minimum at room temperature. For (110) porous Si of similar size of cross section the energy gap is smaller than that of (001) porous Si. The optical transitions for all three structures of (110) porous Si tend to be much stronger along the axis than perpendicular to the axis.