Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B


Autoria(s): Yu XG; Chen SW; Yu JZ; Wang QM
Data(s)

2008

Resumo

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

Electro-optical modulator with dual capacitors is designed and based on this design basic configuration of device is realized in laboratory. Exceeding GHz switching speed and high phase modulation efficiency can be expected with this device.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

SPIE.; Chinese Opt Soc.

[Yu, X. G.; Chen, S. W.; Yu, J. Z.; Wang, Q. M.] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

SPIE.; Chinese Opt Soc.

Identificador

http://ir.semi.ac.cn/handle/172111/7802

http://www.irgrid.ac.cn/handle/1471x/65701

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Yu, XG ; Chen, SW ; Yu, JZ ; Wang, QM .Design of Si-based Electro-optical modulator employed dual capacitors - art. no. 68381B .见:SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC DEVICES AND INTEGRATION II,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6838: B8381-B8381

Palavras-Chave #光电子学 #optoelectronics devices
Tipo

会议论文