Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

zhangdi于2010-03-09批量导入

Made available in DSpace on 2010-03-09T07:08:19Z (GMT). No. of bitstreams: 1 305.pdf: 252141 bytes, checksum: 4d95b3f2dc7121752d6a95a52cef5d83 (MD5) Previous issue date: 2009

Japan Soc Appl phys.; Assoc Promot Elect, Elect & Informat Engn.; Ceram Soc Japan.; IEEE EDS, Kansai Chapter.; IEEJ.; Inst Elect, Informat & Commun Engineers.; Japanese Assoc Crystal Growth.; Surface Sci Soc Japan.; Vacuum Soc Japan.

[Zhao, Y. M.; Sun, G. S.; Liu, X. F.; Li, J. Y.; Zhao, W. S.; Wang, L.; Li, J. M.; Zeng, Y. P.] Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China

Japan Soc Appl phys.; Assoc Promot Elect, Elect & Informat Engn.; Ceram Soc Japan.; IEEE EDS, Kansai Chapter.; IEEJ.; Inst Elect, Informat & Commun Engineers.; Japanese Assoc Crystal Growth.; Surface Sci Soc Japan.; Vacuum Soc Japan.