Growth of Cubic GaN by MOCVD at High Temperature

High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900 ℃, with the growth rate of 1.6 μm/h. The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV. It is smaller than that of the sample grown at 830 ℃. In X-ray diffraction (XRD) measurement, the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21'. It can be concluded that, although c-GaN is of metastable phase, high growth temperature is still beneficial to the improvement in its crystal quality. The relationship between the growth rate and growth temperature is also discussed.

Metalorganic Chemical Vapor Deposition of GaNAs Alloy Using Dimethylhydrazine as Nitrogen Precursor

GaNAs alloy is grown by metalorganic chemical vapor deposition (MOCVD) using dimethylhydrazine (DMHy) as the nitrogen precursor. High-resolution X-ray diffraction (HRXRD) and secondary ion mass spectrometry (SIMS) are combined in determining the nitrogen contents in the samples. Room temperature photoluminescence (RTPL) measurement is also used in characterizing. The influence of different Ga precursors on GaNAs quality is investigated. Samples grown with triethylgallium (TEGa) have better qualities and less impurity contamination than those with trimethylgallium (TMGa). Nitrogen content of 5.688% is achieved with TEGa. The peak wavelength in RTPL measurement is measured to be 1278.5nm.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

We present some results on the effect of initial buffer layer on the crystalline quality of Cubic GaN epitaxial layers grown on GaAs(100) substrates by metalorganic chemical vapor deposition. Photoluminescence and Hall measurements were performed to characterize the electrical and optical properties of cubic GaN. The crystalline quality subsequently grown high-temperature (HT) cubic GaN layers strongly depended on thermal effects during the temperature ramping process after low temperature (LT) growth of the buffer layers. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to investigate this temperature ramping process. Furthermore, the role of thermal treatment during the temperature ramping process was identified. Using the optimum buffer layer, the full width at half maxim (FWHM) at room temperature photoluminescence 5.6 nm was achieved. To our knowledge, this is the best FWHM value for cubic GaN to date. The background carrier concentration was as low as 3 x 10(13) cm(-3). (C) 2000 Published by Elsevier Science S.A. All rights reserved.

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers

We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated.

Fast plasma sintering deposition of nano-structured silicon carbide coatings

Fast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Φ50 mm and 50×50 mm with a deposition rate as high as 20 μm/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment.

Morphology observation of carbon deposition by CH4 decomposition over Ni-based catalysts

We found a novel morphology variation of carbon deposition derived from CH4 decomposition over NI-based catalysts. By altering the chemical composition and particle size of Ni-based catalysts, carbon filaments, nanofibres and nanotubes were observed over conventional Ni/y-Al2O3, Ni-Co/gamma-Al2O3 and nanoscale Ni-Co/gamma-Al2O3 catalysts, respectively. The simple introduction of Co into a conventional Ni/gamma-Al2O3 catalyst can vary the carbon deposition from amorphous filamentous carbon to ordered carbon fibres. Moreover, carbon nanotubes with uniform diameter distribution can be obtained over nanosized Ni-Co/gamma-Al2O3 catalyst particles. In addition, the oxidation behaviour of the different deposited carbon was studied by using a temperature-programmed oxidation technique. This work provides a simple strategy to control over the size and morphology of the carbon deposition from catalytic decomposition of CH4.

Controls on suppression of methane flux from a peat bog subjected to simulated acid rain sulfate deposition

The effect of acid rain SO42− deposition on peatland CH4 emissions was examined by manipulating SO42− inputs to a pristine raised peat bog in northern Scotland. Weekly pulses of dissolved Na2SO4 were applied to the bog over two years in doses of 25, 50, and 100 kg S ha−1 yr−1, reflecting the range of pollutant S deposition loads experienced in acid rain-impacted regions of the world. CH4 fluxes were measured at regular intervals using a static chamber/gas chromatographic flame ionization detector method. Total emissions of CH4 were reduced by between 21 and 42% relative to controls, although no significant differences were observed between treatments. Estimated total annual fluxes during the second year of the experiment were 16.6 g m−2 from the controls and (in order of increasing SO42− dose size) 10.7, 13.2, and 9.8 g m−2 from the three SO42− treatments, respectively. The relative extent of CH4 flux suppression varied with changes in both peat temperature and peat water table with the largest suppression during cool periods and episodes of falling water table. Our findings suggest that low doses of SO42− at deposition rates commonly experienced in areas impacted by acid rain, may significantly affect CH4 emissions from wetlands in affected areas. We propose that SO42− from acid rain can stimulate sulfate-reducing bacteria into a population capable of outcompeting methanogens for substrates. We further propose that this microbially mediated interaction may have a significant current and future effect on the contribution of northern peatlands to the global methane budget.

Short-term effect of increasing nitrogen deposition on CO2, CH4 and N2O fluxes in an alpine meadow on the Qinghai-Tibetan Plateau, China

National Key Research and Development Program [2010CB833500]; Natural Science Foundation of China [30590381]; Knowledge Innovation Project of Chinese Academy of Sciences [KZCX2-YW-432]

Effect of diffusion barrier on the high-temperature oxidation behavior of thermal barrier coatings

A selective oxidation technique has been applied to form a diffusion barrier on the Ni-based superalloy substrate by heating the substrate with electron beam of the electron beam-physical vapor deposition (EB-PVD) facility. The interdiffusion behavior, cross-sectional morphology, isothermal and cyclic oxidations were studied for thermal barrier coatings (TBCs) with and without diffusion barrier.

Carbon deposition behavior over copper salts of molybdovanadophosphoric acid catalyst supported by magnesia

MgO supported copper salt of molybdovanadophosphoric acid H4PMo11VO40 catalysts were prepared in alcohol by impregnation and the carbon deposition over these catalysts during the n-hexanol oxidation reaction was studied. The coke predominantly deposited on the catalyst surface in the form of CH., and it was not found that it caused the deactivation of the catalyst. The XRD, IR, XPS characterizations reveal that the Keggin structure of the CPMV was unaffected by carbon deposition. Moreover, it was shown that the supported CPMVs over the MgO surface can be beneficial to eliminate the coke. The temperature programmed oxidation (TPO) study showed that coke was formed over the catalyst on two different sites: (1) deposited on the CPMVs which can be burn off at a low temperature; (2) deposited on the MgO which could only be removed at higher temperature. The coke content reached constant with the reaction time increasing.

Deposition of GdVO4 : Eu3+ nanoparticles on silica nanospheres by a simple sol-gel method

The deposition and coating of GdVO4: Eu3+ nanoparticles on spherical silica was carried out using a simple sol - gel method at low temperature. The GdVO4: Eu3+-coated silica composites obtained were characterized by differential thermal analysis (DTA), thermogravimetric (TG) analysis, x-ray diffraction (XRD), Fourier-transform IR spectroscopy (FT-IR), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), photoluminescence spectra, and kinetic decay. It is found that the similar to 5 nm GdVO4: Eu3+ nanoparticles coating the silica spheres are crystal in the as-prepared samples and the crystallinity increases with increasing annealing temperature. The composites obtained are spherical in shape with an average size of 100 nm. The GdVO4: Eu3+ nanoparticles are linked with silica cores by a chemical bond. The photoluminescence spectra of the obtained GdVO4: Eu3+-coated silica composites are similar to those of the bulk GdVO4: Eu3+ phosphors. The strongest peak is near 617 nm, which indicates that Eu3+ is located in the low symmetry site with non-inversion centre.

Enhancement of the electrooxidation of ethanol on Pt-Sn-P/C catalysts prepared by chemical deposition process

In this paper, five Pt3Sn1/C catalysts have been prepared using three different methods. It was found that phosphorus deposited on the surface of carbon with Pt and Sn when sodium hypophosphite was used as reducing agent by optimization of synthetic conditions such as pH in the synthetic solution and temperature. The deposition of phosphorus should be effective on the size reduction and markedly reduces PtSn nanoparticle size, and raise electrochemical active surface (EAS) area of catalyst and improve the catalytic performance. TEM images show PtSnP nanoparticles are highly dispersed on the carbon surface with average diameters of 2 nm. The optimum composition is Pt3Sn1P2/C (note PtSn/C-3) catalyst in my work. With this composition, it shows very high activity for the electrooxidation of ethanol and exhibit enhanced performance compared with other two Pt3Sn1/C catalysts that prepared using ethylene glycol reduction method (note PtSn/C-EG) and borohydride reduction method (note PtSn/-B). The maximum power densities of direct ethanol fuel cell (DEFC) were 61 mW cm(-2) that is 150 and 170% higher than that of the PtSn/C-EG and PtSn/C-B catalyst.

Heterojunction ambipolar organic transistors fabricated by a two-step vacuum-deposition process

Ambipolar organic field-effect transistors (OFETs) are produced, based on organic heterojunctions fabricated by a two-step vacuum-deposition process. Copper phthalocyanine (CuPc) deposited at a high temperature (250 degrees C) acts as the first (p-type component) layer, and hexadecafluorophthalocyaninatocopper (F16CuPc) deposited at room temperature (25 degrees C) acts as the second (n-type component) layer. A heterojunction with an interpenetrating network is obtained as the active layer for the OFETs. These heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10(-4) cm(2) V-1 s(-1) in air. Conductive channels are at the interface between the F16CuPc and CuPc domains in the interpenetrating networks. Electrons are transported in the F16CuPc regions, and holes in the CuPc regions. The molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. The thin-film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum-deposition process.