Fast plasma sintering deposition of nano-structured silicon carbide coatings


Autoria(s): Huang HJ(黄河激); Fu ZQ(付志强); Pan WX(潘文霞); Wu CK(吴承康)
Data(s)

06/01/2011

Resumo

Fast plasma sintering deposition of SiC nano-structured coatings was achieved using a specially designed non-transferred dc plasma torch operated at reduced pressure. Employing the Taguchi method, the deposition parameters were optimized and verified. With the optimized combination of deposition parameters, homogeneous SiC coatings were deposited on relatively large area substrates of Φ50 mm and 50×50 mm with a deposition rate as high as 20 μm/min. Ablation test showed that such coatings can be used as oxidation resistance coatings in high temperature oxidizing environment.

Identificador

http://dspace.imech.ac.cn/handle/311007/43279

http://www.irgrid.ac.cn/handle/1471x/124997

Idioma(s)

英语

Fonte

Huang HJ,Fu ZQ,Pan WX,et al. Fast plasma sintering deposition of nano-structured silicon carbide coatings[C]. 见:18th International Vacuum Congress. 北京. 2010-08-23~2010-08-27

Palavras-Chave #交叉与边缘领域的力学 #reduced-pressure #plasma sintering deposition #silicon carbide coating #ultrafast deposition
Tipo

会议论文