High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers


Autoria(s): Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei)
Data(s)

2010

Resumo

We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated.

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Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419,

其它

Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419,

Identificador

http://ir.semi.ac.cn/handle/172111/20657

http://www.irgrid.ac.cn/handle/1471x/105303

Idioma(s)

英语

Fonte

Wang Y (Wang Yang), Qiu YP (Qiu Ying-Ping), Pan JQ (Pan Jiao-Qing), Zhao LJ (Zhao Ling-Juan), Zhu HL (Zhu Hong-Liang), Wang W (Wang Wei).High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers.CHINESE PHYSICS LETTERS,2010,27(11):Art. No. 114201

Palavras-Chave #半导体器件 #AUGER RECOMBINATION #THRESHOLD CURRENT #DEPENDENCE #DEVICE
Tipo

期刊论文