High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers
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2010
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Resumo |
We fabricate 1.5 mu m InGaAsP/InP tunnel injection multiple-quantum-well (TI-MQW) Fabry-Perot (F-P) ridge lasers. The laser heterostructures, including an inner cladding layer and an InP tunnel barrier layer, are grown by metal-organic chemical-vapor deposition (MOCVD). Characteristic temperature.. 0 of 160K at 20 degrees C is obtained for 500-mu m-long lasers. T-0 is measured as high as 88K in the temperature range of 15-75 degrees C. Cavity length dependence of T-0 is investigated. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05T04:08:56Z No. of bitstreams: 1 High Characteristic Temperature InGaAsP-InP Tunnel Injection Multiple-Quantum-Well Lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05T04:19:56Z (GMT) No. of bitstreams: 1 High Characteristic Temperature InGaAsP-InP Tunnel Injection Multiple-Quantum-Well Lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (MD5) Made available in DSpace on 2010-12-05T04:19:56Z (GMT). No. of bitstreams: 1 High Characteristic Temperature InGaAsP-InP Tunnel Injection Multiple-Quantum-Well Lasers.pdf: 558734 bytes, checksum: a3696da466df920a754ce0a29866b580 (MD5) Previous issue date: 2010 Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419, 其它 Supported by the National Natural Science Foundation of China under Grant Nos 60736036, 60706009, 60777021 and 60702006, the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Program of China under Grant No 2007AA03Z419, |
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Idioma(s) |
英语 |
Fonte |
Wang Y (Wang Yang), Qiu YP (Qiu Ying-Ping), Pan JQ (Pan Jiao-Qing), Zhao LJ (Zhao Ling-Juan), Zhu HL (Zhu Hong-Liang), Wang W (Wang Wei).High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers.CHINESE PHYSICS LETTERS,2010,27(11):Art. No. 114201 |
Palavras-Chave | #半导体器件 #AUGER RECOMBINATION #THRESHOLD CURRENT #DEPENDENCE #DEVICE |
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期刊论文 |