Quantum path control in few-optical-cycle regime

We theoretically show that selection of a single quantum path in high-order harmonics generation can be realized in a few-optical-cycle regime with two-color schemes. We also demonstrate, in theory as well, the generation of spectrally smooth and ultrabroad extreme ultraviolet supercontinuum in argon gas which can produce single similar to 79 as pulses with currently available ultrafast laser sources. Our finding can be beneficial for generating isolated sub-100 as extreme ultraviolet pulses.

A planar waveguide Nd : YAG laser using active Q-switching of a hybrid unstable resonator

A planar waveguide laser operating in a negative branch unstable resonator is Q-switched by an acoustooptic mod latorin anew configuration, providing effective, high-speed switching. The laser using a 200-mu m Nd:YAG core, face pumped by 10 laser diode bars, has produced 100-W output in a good beam quality at 100-kHz pulse rate, and 4.5 mJ at lower frequency with 15-ns pulse duration.

Laser-diode-pumped Cr4+,Nd3+: YAG with self-Q-switched laser output of 1.4 W

By use of a laser diode as a pump source, a self-Q-switched laser from a Cr,Nd:YAG crystal is demonstrated. The output Q-switched traces are very stable, the threshold pump power is 3.5 W, the pulse duration is 50 ns, and the slope efficiency is as high as 20%. In addition, the pulse width remains constant while the pulse repetition rate Varies with pump power. (C) 2000 Optical Society of America OCIS codes: 140.0140, 140.2020, 140.3380, 140.3480, 140.3540, 140.3580.

Upconversion luminescence from E-2 state of Cr3+ in Al2O3 crystal by infrared femtosecond laser irradiation

Visible upconversion luminescence was observed in Cr3+: Al2O3 crystal under focused femtosecond laser irradiation. The luminescence spectra show that the upconversion luminescence originates from the E-2-(4)A(2) transition of Cr3+. The dependence of the fluorescence intensity of Cr3+ on the pump power reveals that a two-photon absorption process dominates in the conversion of infrared radiation to the visible emission. It is suggested that the simultaneous absorption of two infrared photons produces the population of upper excited states, which leads to the characteristic visible emission from E-2 state of Cr3+.

Three-photon-excited upconversion luminescence of Ce3+: YAP crystal by femtosecond laser irradiation

Infrared to ultraviolet and visible upconversion luminescence was demonstrated in trivalent cerium doped YAlO3 crystal (Ce3+: YAP) under focused infrared femtosecond laser irradiation. The fluorescence spectra show that the upconverted luminescence comes from the 5d-4f transitions of trivalent cerium ions. The dependence of luminescence intensity of trivalent cerium on infrared pumping power reveals that the conversion of infrared radiation is dominated by three-photon excitation process. It is suggested that the simultaneous absorption of three infrared photons pumps the Ce3+ ion into upper 5d level, which quickly nonradiatively relax to lowest 5d level. Thereafter, the ions radiatively return to the ground states, leading to the characteristic emission of Ce3+. (c) 2005 Optical Society of America.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Sites structure and spectroscopic properties of Yb-doped and Yb, Na-codoped CaF2 laser crystals

For the first time, the effect of Na+ on crystal structure, valence state of Yb ions, spectroscopic properties of YbF3-doped CaF2 system was systematically studied. Na+ can greatly suppress the deoxidization of Yb3+ to Yb2+. Absorption and emission spectra showed codoping Na+ with different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in CaF2 lattice in a large scope. The emission lifetime and quantum efficiency of Yb3+ in CaF2 were greatly enhanced by the codopant of Na+. The potential laser performances of the new Yb, Na-codoped CaF2 crystals were predicted. (c) 2005 Elsevier B.V. All rights reserved.

Efficient diode-pumped Tm : YALO(3) laser with a pump recycling scheme

By using a pump recycling configuration, the maximum power of 8.1 W in the wavelength range 1.935-1.938 mu m is generated by a 5-mm long Tm:YAlO3 (4 at. %) laser operating at 18 degrees C with a pump power of 24 W. The highest slope efficiency of 42% is attained, and the pump quantum efficiency is up to 100%. The Tm:YAlO3 laser is employed as a pumping source of singly-doped Ho(l%):GdVO4 laser operating at room temperature, in which continuous wave output power of greater than 0.2 W at 2.05 mu m is achieved with a slope efficiency of 9%.

High quantum fluorescence yield of Er3+ at 1.5 mu m in an Yb3+, Ce3+-codoped CaF2 crystal

For the first time, a quaternary doping system of Er3+, Yb3+, Ce3+, Na+:CaF2 single crystal was demonstrated to have high fluorescence yield in the eye-safe 1.5 mu m region under 980 nm laser diode pumping, with relatively broad and flat gain curves. A simplified model was established to illustrate the effect of Ce3+ on the branching ratio for the Er3+4I11/2 -> I-4(13/2) transition. With 0.2-at.% Er3+ and 2.0-at.% Ce3+ in the quaternary-doped CaF2 crystal, the branching ratio was estimated to be improved more than 40 times by the deactivating effect of Ce3+ on the Er3+ 4I11/2 level. The quaternary-doped CaF2, system shows great potential to achieve high laser performance in the 1.5 mu m region. (c) 2006 Elsevier B.V. All rights reserved.

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.

Epitaxial Semiconductor Quantum Wires

The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.