Characterization of diode-pumped laser operation of a novel Yb : GSO crystal


Autoria(s): Xue YH; Wang CY; Liu QW; Li YF; Chai L; 严成锋; 赵广军; 苏良碧; 徐晓东; Xu J
Data(s)

2006

Resumo

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Identificador

http://ir.siom.ac.cn/handle/181231/5627

http://www.irgrid.ac.cn/handle/1471x/12287

Idioma(s)

英语

Fonte

Xue YH;Wang CY;Liu QW;Li YF;Chai L;严成锋;赵广军;苏良碧;徐晓东;Xu J.,IEEE J. Quantum Electron.,2006,42(5-6):517-521

Palavras-Chave #光学材料;晶体 #continuous-wave (CW) mode locking #diode-pumped lasers #Q-switched mode locking #Yb : GSO crystal
Tipo

期刊论文