Epitaxial Semiconductor Quantum Wires


Autoria(s): Wu J; Chen YH; Wang ZG
Data(s)

2008

Resumo

The investigation on the direct epitaxial quantum wires (QWR) using MBE or MOCVD has been persuited for more than two decades, more lengthy in history as compared with its quantum dot counterpart. Up to now, QWRs with various structural configurations have been produced with different growth methods. This is a reviewing article consisting mainly of two parts. The first part discusses QWRs of various configurations, together with laser devices based on them, in terms of the two growth mechanisms, self-ordering and self-assembling. The second part gives a brief review of the electrical and optical properties of QWRs.

973 program 2006CB604908 National Natural Science Foundation of China 60625402 The work was supported by the 973 program (2006CB604908), and the National Natural Science Foundation of China (60625402). The authors thank Dr. X. L. Ye and B. Xu for helpful discussion.

Identificador

http://ir.semi.ac.cn/handle/172111/6362

http://www.irgrid.ac.cn/handle/1471x/62919

Idioma(s)

英语

Fonte

Wu, J ; Chen, YH ; Wang, ZG .Epitaxial Semiconductor Quantum Wires ,JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2008 ,8(7): 3300-3314

Palavras-Chave #半导体化学 #Epitaxy
Tipo

期刊论文