The mechanism of PEO process on Al–Si alloys with the bulk primary silicon

This study focuses on mechanism of ceramic coating on Al-Si alloys with bulk primary Si using plasma electrolytic oxidation (PEO) technology. Al-Si alloys with 27-32% Si in weight were used as substrates. The morphologies, composition and microstructure of PEO coatings were investigated by scanning electron microscopy (SEM) with energy dispersive X-ray system (EDX). Results showed that the PEO process had four different stages. The effect of bulk Si is greatly on the morphology and composition of coatings at first three stages. Anodic oxide films formed on Al and Si phases, respectively. When the voltage exceeded 40 V, glow appeared and concentrated on the localized zone of interface of Al and Si phase. Al-Si-O compounds formed and covered on the dendrite Si phase surface, and the coating on bulk Si, which was silicon oxide, was rougher than that on other phase. If the treatment time was long enough, the coatings with uniform surface morphologies and elements distribution will be obtained but the microstructure of inner layer is looser due to the bulk Si.

On a novel method of impact by a front-end-coated bullet to evaluate the interface adhesion between film and substrate

A preliminary experiment was carried out to validate the feasibility of the method of impact by a front-end-coated bullet to evaluate the interface adhesion between film and substrate. The theoretical description of the initiation, propagation and evolution of the stress pulse during impact was generalized and formulized. The effects of the crucial parameters on the interface stress were further investigated with FEM. The results found the promising prospect of the application of such a method and provided useful guidance for experimental design.

裂缝光纤传感的工程应用

光纤传感的灵敏性及工程"存活率"是其工程实用化的两个关键技术参量,对光纤-混凝土结构两种常用裂缝光纤传感光信号对裂缝宽度的灵敏性与存活率进行了实验研究,对光纤涂覆层对灵敏性影响的大小和机理进行了分析,并制作了灵敏性与存活率均较高的光纤试验样本,与裂缝成45°夹角时,相比于等直径的普通二次涂覆粗光纤(10/125/900μm),样本的灵敏性提高近65%,而存活率亦高出约15%。研究结果可为裂缝光纤传感的优化设计和工程应用提供了基本参照。

光纤涂敷层对光纤裂缝传感器分布式监测能力的影响

基于混凝土模型试验，对涂敷层的传感光纤的裂缝复用能力进行了定量分析，得到了传感光纤和工程结构裂缝夹角在30°，45°，60°时的复用能力与裂缝宽度的关系曲线。对由软性材料构成的光纤涂敷层来说，光纤的复用能力随涂敷层厚度的增加而增大，在与裂缝夹角成45°时，二次涂敷粗光纤的复用能力约为细光纤的5倍，表明光纤敷层对光纤裂缝监测的复用能力具有较大影响。对这种影响的机理进行了理论分析和试验研究，发现当混凝土开裂时，光纤沿混凝土界面的滑移是光纤涂敷层影响光纤裂缝复用能力的主要原因，在光纤与裂缝夹角成45°时，这一影

溶胶-凝胶多孔二氧化硅减反膜稳定性研究

多孔SiO2膜层经热处理后，具有很高的激光破坏阈值，但是结构中有许多Si-OH亲水基团，导致光学透过率受环境相对湿度的影响很大。实验目的是改善膜层内部结构，使膜层结构中的亲水基团转变为疏水基团。提高膜层的疏水性，增强膜层的透过率稳定性。系统地研究了膜层透过率随时间变化的规律，在氨气和六甲基二硅氮烷(HMDS)混合气氛下热处理膜层，处理后生成Si-O-Si(CH2)3非极性疏水基团，使膜层的疏水性大大提高，因而膜层的透过率稳定性有大幅度提高。稳定性的提高延长了膜层的寿命。处理后膜层的表面粗糙度良好，均方根表

掺入有机硅提高溶胶-凝胶二氧化硅减反膜的稳定性研究

膜层稳定性对于激光器能否长期稳定使用极为重要。多孔SiO。减反膜经热处理后，结构中还存在许多Si—OH亲水基团，透过率稳定性受环境相对湿度的影响较大。向膜层中掺入有机硅，添加疏水基团，提高了膜层的疏水性，增强了膜层的透过率稳定性。膜层中加了Si-CH3疏水基团，膜层的疏水性大大提高；当Si-CH3与二氧化硅悬胶体中的Si的摩尔比为1／5．7时，即Si—CH3质量分数为0．35％时的二氧化硅膜层，其减反效果好，疏水性也高，从而大幅度提高了膜层的透过率稳定性，延长了膜层的寿命，对二氧化硅膜层具有高激光损伤阈值

磷酸盐激光玻璃凝胶防潮膜和减反膜

采用溶胶-凝胶方法制备（CH3）2Si（OC2H5）2预聚体涂膜液以及掺入SiO2悬胶体涂膜液改性，采用旋转法在掺钕磷酸盐激光玻璃棒端面涂制防潮膜，热处理后膜层固化。SiO2改性的CH3O防潮膜，热处理后的膜层耐摩擦性能明显改善。然后旋转涂制第二层多空性SiO2减反膜，涂膜胶体通过硅酸乙脂碱催化水解缩聚制得，减反膜的折射率为约1．25，玻璃棒涂膜后激光波长1053nm减少表面反射率6．5％-7．5％，双层膜激光破坏阈值12J／cm^2，1053nm／1ns，膜层表面粗糙度（RMS）2．523nm。直径20

高激光损伤阈值溶胶-凝胶ZrO2薄膜

采用醇热法水解氧氯化锆（ZrOCl2·8H2O）制备ZrO2溶胶，提拉法涂膜。采用粘度、粒度分布、折射率、IR、DSC、AFM等测试手段对溶胶和薄膜性能进行表征。结果表明，ZrO2溶胶颗粒的平均粒径为18．9nm，薄膜经300℃热处理后折射率可高达1．95，膜层表面均匀平整，表面平均粗糙度仅为0．561nm，膜层的激光损伤阈值为14J／cm^2（1064nm，1ns）。

甲基化对多孔SiO_2增透薄膜光学稳定性能的影响

分别通过引入甲基三乙氧基硅烷(MTES)、二甲基二乙氧基硅烷(DMDES)以及六甲基二硅氮烷(HMDS)组分对SiO2悬胶体进行改性,得到不同甲基化的多孔SiO2改性薄膜。研究了改性薄膜的光学稳定性,抗激光破坏性能以及机械抗擦性能。结果表明,HMDS改性薄膜的光学稳定性最好而机械抗擦性较弱,MTES与DMDES改性薄膜的光学稳定性较低而机械抗擦性良好且均与改性组分的含量有关,甲基化改性薄膜的抗激光破坏性能比未改性薄膜的有所降低。

Structure and properties of amorphous thin film for optical data storage

In this paper the magnetic and magneto-optical properties of amorphous rare earth-transition metal (RE-TM) alloys as well as the magnetic coupling in the multi-layer thin films for high density optical data storage are presented. Using magnetic effect in scanning tunneling microscopy the clusters structure of amorphous RE-TM thin films has been observed and the perpendicular magnetic anisotropy in amorphous RE-TM thin films has been interpreted. Experimental results of quick phase transformation under short pulse laser irradiation of amorphous semiconductor and metallic alloy thin films for phase change optical recording are reported. A step-by-step phase transformation process through metastable states has been observed. The waveform of crystallization propagation in micro-size spot during laser recording in amorphous semiconductor thin films is characterized and quick recording and erasing mechanism for optical data storage with high performance are discussed. The nonlinear optical effects in amorphous alloy thin films have been studied. By photo-thermal effect or third order optical nonlinearity, the optical self-focusing is observed in amorphous mask thin films. The application of amorphous thin films with super-resolution near field structure for high-density optical data storage is performed. (c) 2007 Elsevier B.V. All rights reserved.

Structural change of laser-irradiated Ge2Sb2Te5 films studied by electrical property measurement

Sheet resistance of laser-irradiated Ge2Sb2Te5 thin films prepared by magnetron sputtering was measured by the four-point probe method. With increasing laser power the sheet resistance undergoes an abrupt drop from 10(7) to 10(3) Omega/square at about 580 mW. The abrupt drop in resistance is due to the structural change from amorphous to crystalline state as revealed by X-ray diffraction (XRD) study of the samples around the abrupt change point. Crystallized dots were also formed in the amorphous Ge2Sb2Te5 films by focused short pulse laser-irradiated, the resistivities at the crystallized dots and the non-crystallized area are 3.375 x 10(-3) and 2.725 Omega m, sheet resistance is 3.37 x 10(4) and 2.725 x 10(7) Omega/square respectively, deduced from the I-V Curves that is obtained by conductive atomic force microscope (C-AFM). (C) 2008 Elsevier B.V. All rights reserved.

Modelling and simulation of the second-order Doppler error of a laser dual-frequency interferometer

Only the first- order Doppler frequency shift is considered in current laser dual- frequency interferometers; however; the second- order Doppler frequency shift should be considered when the measurement corner cube ( MCC) moves at high velocity or variable velocity because it can cause considerable error. The influence of the second- order Doppler frequency shift on interferometer error is studied in this paper, and a model of the second- order Doppler error is put forward. Moreover, the model has been simulated with both high velocity and variable velocity motion. The simulated results show that the second- order Doppler error is proportional to the velocity of the MCC when it moves with uniform motion and the measured displacement is certain. When the MCC moves with variable motion, the second- order Doppler error concerns not only velocity but also acceleration. When muzzle velocity is zero the second- order Doppler error caused by an acceleration of 0.6g can be up to 2.5 nm in 0.4 s, which is not negligible in nanometric measurement. Moreover, when the muzzle velocity is nonzero, the accelerated motion may result in a greater error and decelerated motion may result in a smaller error.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

双源共蒸法制备非均匀膜的模型分析

探讨了双源共蒸法制备非均匀薄膜的堆积模型，并给出了非均匀膜的沉积速率与两种膜料沉积速率的关系．当两种膜料的沉积单分子大小近似相等或者小分子沉积速率远大于大分子时，可以近似认为混合介质膜的沉积速率等于两种膜料的沉积速率之和；当两种膜料的沉积单分子大小不满足近似相等且两种膜料的沉积速率可比较时，非均匀膜的沉积速率不能简单地用两种膜料的沉积速率之和来近似，它将随两种膜料沉积单分子的大小不同和沉积速率比不同按照不同的规律变化，并在文中给出了不同情况下的非均匀膜的沉积速率变化规律。