241 resultados para Tio(x) thin film
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Binary and ternary europium complexes with dibenzplymethane (DBM) and 1,10-phenanthroline (phen) were synthesized and doped into a sol-gel luminescence thin film and polyvinylbutyral (PVB) film. The luminescent spectra and lifetime of the films were measured. The final results showed that Eu(III) characteristic emission bands were observed in the spectra of all the doped films. Longer lifetimes and a higher photo-stability were observed in SiO2:Eu(III) complex luminescent thin films than in PVB:Eu(III) complex films that contained a corresponding amount of pure complexes. Heat-stability tests showed that SiO2:Eu(III) complex thin films still showed certain fluorescence after heat-treatment at a temperature of 130 degreesC, while little fluorescence could be observed in PVB:Eu(III) complex films under a UV lamp. (C) 2001 Elsevier Science B.V. All rights reserved.
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The behavior of electrical conductivity for excimer laser irradiated polyimide films in the vicinity of the critical number of laser shots was described by three-dimensional percolative phase transition model. It is: found that electrical conductivity changed more rapidly than that predicted by the percolation model. Thus, the change in microstructure with increasing number of laser shots was analyzed by FT-IR Raman spectrometry and laser desorption time-of-flight mass spectrometry. It is demonstrated that not only the number but also the average size of graphite particles on the irradiated polyimide film surfaces increased with increasing number of laser shots. These results were helpful to better understand the critical change in electrical conductivity on the irradiated polyimide film surfaces. (C) 2001 Elsevier Science B.V. All rights reserved.
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An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.
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An acid-stable soybean-peroxidase biosensor was devel oped by immobilizing the enzyme in a sol-gel thin film. Methylene blue was used as a mediator because of its high electron-transfer efficiency. The sol-gel thin film and enzyme membrane were characterized by FT-IR, and the effects of pH, operating potential, and temperature were explored for optimum analytical performance by using the amperometric method. The H2O2 sensor exhibited a fast response (5 s), high sensitivity (27.5 mu A/mM), as well as good thermostability and long-term stability. In addition, the performance of the biosensor was investigated using flow-injection analysis (FIA).
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A compact blue conducting mixed-valence Mo (VI,V) oxide film was grown on the surface of a carbon fibre (CF) microelectrode by cycling the potential between +0.20 and similar to 0.70 V SCE in freshly prepared Na2MoO4 solution in H2SO4 (pH 2). The thicknes
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G chemically modified electrode (CME) was prepared by electrochemical copolymerization of pyrrole and Methylene Blue. The resulting CME exhibits effective electrocatalytic activity towards the oxidation of reduced nicotinamide coenzymes (NADH and NADPH),
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A supported lanthanum gallate (LSGM) electrolyte thin-film solid oxide fuel cell with Ni-YSZ cermet anode and strontium-doped lanthanum manganite (LSM)-yttria stabilized zirconia (YSZ) composite cathode was, for the first time, fabricated and tested. The cell was prepared by an unconventional approach, in which an LSGM thin film (about 15 mum thick) was first deposited on a porous substrate such as a porous YSZ disk by a wet process and sintered at a high temperature (above 1400degrees C). NiO was then incorporated into the porous substrate by a carefully controlled impregnation process and fired at a much lower temperature. In this way, the severe reaction between LSGM and NiO at a high temperature, which is required for the full densification of LSGM film, can be avoided. A strontium-doped LaMnO3 (LSM)-YSZ composite cathode was screen printed on the surface of the LSGM film and then fired at 1250degrees C. The electrolyte resistances of the SOFC single cells fabricated by this approach are much lower compared to those of thick LSGM film supported cells. A maximum output power density of over 0.85 W/cm(2) at 800degreesC with H-2 as fuel and air as oxidant for a fabricated cell was achieved. (C) 2002 The Electrochemical Society.
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ZrO2采用X射线衍射(XRD)技术分析了不同充氧条件和沉积温度对ZrO2溥膜组成结构的影响,并对不同工艺下制备的薄膜的表面粗糙度和激光损伤阈值进行了测量。结果发现随着氧压的升高,ZrO2溥膜将由单斜相多晶态逐渐转变为非晶态结构,而随着基片温度的增加,溥膜将由非晶态逐渐转变为单斜相多晶态。同时发现随着氧压升高晶粒尺寸减小,而随着沉积温度增加,晶粒尺寸增大。氧压增加时工艺对表面粗糙度有一定程度的改善,而沉积温度升高,工艺对表面粗糙度的改善不明显。晶粒尺寸大小变化与表面粗糙度变化存在对应关系。激光损伤测量表明
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National Natural Science Foundation of China 60836002 10674130 60521001;Major State Basic Research of China 2007CB924903;Chinese Academy of Sciences KJCX2.YW.W09-1
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The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.
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Thin film phosphors with compositions of RP1-xVxO4: A (R = Y, Gd, La; A = Sm3+, Et3+; x = 0, 0.5, 1) have been prepared by a Pechini sol-gel process. X-Ray diffraction, atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized to characterize the thin film phosphors. The results of XRD showed that a solid solution formed in YVxP1-xO4: A film series from x = 0 to x = 1 with zircon structure, which also held for GdVO4: A film. However, LaVO4: A film crystallized with a different structure, monazite. AFM study revealed that the phosphor films consisted of homogeneous particles ranging from 90 to 400 nm depending on the compositions. Upon short ultraviolet excitation, the films exhibit the characteristic Sm(3+ 4)G(5/2)-H-6(J) (J=5/2, 7/2, 9/2) emission in the red region and Er3+ H-2(11/2), S-4(3/2)-I-4(15/2) emission in the green region, respectively With the increase of x values in YVxP1-xO4: SM3+ (Er3+) films, the emission intensity Of SM3+ (Er3+) increases due to the increase of energy transfer probability from VO43- to Sm3+ (Er3+). Due to the structural effects, the Sm3+ (Er3+) shows similar spectral properties in YVO4 and GdVO4 films, which are much different from those in LaVO4 film.
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In order to characterize the physical and spatial properties of nano-film pattern on solid substrates, an automatic imaging spectroscopic ellipsometer (ISE) based on a polarizer - compensator - specimen - analyzer configuration in the visible region is presented. It can provide the spectroscopic ellipsometric parameters psi (x, y, lambda) and Delta (x, y, lambda) of a large area specimen with a lateral resolution in the order of some microns. A SiO2 stepped layers pattern is used to demonstrate the function of the ISE which shows potential application in thin film devices' such as high-throughput bio-chips.
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Recently, it has been observed that a liquid film spreading on a sample surface will significantly distort atomic force microscopy (AFM) measurements. In order to elaborate on the effect, we establish an equation governing the deformation of liquid film under its interaction with the AFM tip and substrate. A key issue is the critical liquid bump height y(0c) at which the liquid film jumps to contact the AFM tip. It is found that there are three distinct regimes in the variation of y(0c) with film thickness H, depending on Hamaker constants of tip, sample and liquid. Noticeably, there is a characteristic thickness H* physically defining what a thin film is; namely, once the film thickness H is the same order as H* , the effect of film thickness should be taken into account. The value of H* is dependent on Hamaker constants and liquid surface tension as well as tip radius.