Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate


Autoria(s): Meng QB; Fei YJ; Kang J; Xiong YY; Lin ZD; Feng KA
Data(s)

1999

Resumo

An interesting interface structure between diamond film and silicon substrate has been observed. That is, according to the deformation of the diamond film crystal sturcture, a strictly 3:2 matching of the two lattices across the interface is obtained. This result clearly indicates that misfit dislocations at the interface and "epitaxial tilting" are not the only two ways to overcome the 1.5% residual misfit.

Identificador

http://202.98.16.49/handle/322003/21851

http://www.irgrid.ac.cn/handle/1471x/155660

Idioma(s)

英语

Fonte

Meng QB;Fei YJ;Kang J;Xiong YY;Lin ZD;Feng KA.Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate,MODERN PHYSICS LETTERS B,1999,13(3-4):125-129

Palavras-Chave #CHEMICAL-VAPOR-DEPOSITION #ORIENTED DIAMOND #GROWTH #NUCLEATION #LAYERS #BIAS
Tipo

期刊论文