Miscibility and crystallization behavior of thermosetting polyimide thermoplastic polyimide blends

Compatibility, morphology, crystalline structure and mechanical properties of the blends of a thermosetting polyimide with thermoplastic polyimides consisting of dianhydrides of different lengths have been studied by the use of dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and small-angle X-ray scattering (SAXS) techniques. The results of our research show that the blends change from compatible to semi-compatible when the difference between the length of the dianhydrides of the two components increases. Addition of a thermoplastic polyimide inhibits the crystallization of the thermosetting component. However, this effect decreases with increasing length of the dianhydrides and the distribution of the molecules of the thermoplastic polyimide component changes from interlamellar to interfibrillar. Impact strength and morphology of the fractured surfaces indicate that among the semiinterpenetrating polymer networks (semi-IPN) obtained the toughening effect of the partially compatible one is the best. The results are discussed in terms of charge transfer interaction between imide group and p-phenylene group.

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed ST InP wafer has been found to exhibit a better photoluminescence uniformity. Radial Hall measurements also show that there is a better resistivity uniformity on the FeP2-annealed Sl InP wafer. When comparing the distribution of deep levels between the annealed wafers measured by optical transient Current spectroscopy, we find that the incorporation of iron atoms into the Sl InP Suppresses the formation of a few defects. The correlation observed in this study implies that annealing in iron phosphorus ambience makes Fe atoms diffuse uniformly and occupy the indium site in the Sl InP lattice. As it stands, we believe that annealing undoped conductive InP in iron phosphide vapour is an effective means to obtain semi-insulating InP wafers with superior uniformity.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity

A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.

A standard CMOS compatible monolithic photo-detector and trans-impedance amplifier

A 1GHz monolithic photo-detector (PD) and trans-impedance amplifier (TIA) is designed with the standard 0.35 mu m CMOS technique. The design of the photo-detector is analyzed and the CMOS trans-impedance amplifier is also analyzed in the paper. The integrating method is described too. The die photograph is also showed in the paper.

Behavior model of a CMOS process compatible photo-diode

A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment.

Block and parallel modelling of broad domain nonlinear continuous mapping based on NN

The necessity of the use of the block and parallel modeling of the nonlinear continuous mappings with NN is firstly expounded quantitatively. Then, a practical approach for the block and parallel modeling of the nonlinear continuous mappings with NN is proposed. Finally, an example indicating that the method raised in this paper can be realized by suitable existed software is given. The results of the experiment of the model discussed on the 3-D Mexican straw hat indicate that the block and parallel modeling based on NN is more precise and faster in computation than the direct ones and it is obviously a concrete example and the development of the large-scale general model established by Tu Xuyan.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Alteration mineral mapping using masking and Crosta technique for mineral exploration in mid-vegetated areas: a case study in Areletuobie, Xinjiang (China)

Thematic Mapper (TM) and Enhanced Thematic Mapper (ETM)+ data have been successfully employed in the field of mineral exploration to identify key minerals over arid and semi-arid terrains. However, redundant vegetation and cloud may seriously interfere with the discrimination of the minerals with diagnostic features. Therefore, in this study, we use masking technique to eliminate the negative influence of vegetation and cloud and Crosta technique to identify the diagnostic features of hydroxyl-minerals, carbonate-minerals and iron oxides. Then the anomalies were endowed with special colours and overlapped with the remote-sensing and geochemical data, overlaying images as remote-sensing anomalies. The mineral exploration work was carried through by synthetic analysis of the remote-sensing images, geochemical data and structures. Finally, areas with high correlation between the occurrence of hydrothermal alteration and presence of main faults and geochemical anomalies were considered as mineral exploration targets worthy of further detailed exploration programmes.

Two-Point Closure Strategy in the Mapping Closure Approximation Approach

A two-point closure strategy in mapping closure approximation (MCA) approach is developed for the evolution of the probability density function (PDF) of a scalar advected by stochastic velocity fields. The MCA approach is based on multipoint statistics. We formulate a MCA modeled system using the one-point PDFs and two-point correlations. The MCA models can describe both the evolution of the PDF shape and the rate at which the PDF evolves.

Flame Propagation of H_2-Air in a Semi-Open Obstructed Tube

针对氢／空气混合物,通过实验研究了其预混火焰在半开口管道中的火焰传播加速现象,结果表明,火焰传播状态随着氢气当量比的变化而发生改变。当氢／空气混合物被点燃后,由于障碍物的扰动,火焰在管道中不断加速传播,并最终到达一准稳态传播。在氢气当量比0.31附近时,火焰速度发生跃变。当氢气当量比足够大时,火焰传播由爆燃态转变为爆轰态。在本实验条件下,爆燃转准爆轰的临界条件是d/Lambda>=2.6（d是圆环形障碍物内径,人是爆轰格胞尺度）。障碍物阻塞比的变化对最大火焰速度和压力提升的影响不明显。

Mapping Closure Approximation for Reactive Scalars in Random Flows

The Mapping Closure Approximation (MCA) approach is developed to describe the statistics of both conserved and reactive scalars in random flows. The statistics include Probability Density Function (PDF), Conditional Dissipation Rate (CDR) and Conditional Laplacian (CL). The statistical quantities are calculated using the MCA and compared with the results of the Direct Numerical Simulation (DNS). The results obtained from the MCA are in agreement with those from the DNS. It is shown that the MCA approach can predict the statistics of reactive scalars in random flows.

A Semi-Empirical Equation of Penetration Depth on Concrete Target Impacted by Ogive-Nose Projectiles

In this paper, the penetration process of ogive-nose projectiles into the semi-infinite concrete target is investigated by the dimensional analysis method and FEM simulation. With the dimensional analysis, main non-dimensional parameters which control the penetration depth are obtained with some reasonable hypothesis. Then, a new semi-empirical equation is present based on the original work of Forrestal et al., has only two non-dimensional combined variables with definite physical meanings. To verify this equation, prediction results are compared with experiments in a wide variation region of velocity. Then, a commercial FEM code, LS-DYNA, is used to simulate the complex penetration process, that also show the novel semi-empirical equation is reasonable for determining the penetration depth in a concrete target.

Semi-weight function method on computation of stress intensity factors in dissimilar materials

Semi-weight function method is developed to solve the plane problem of two bonded dissimilar materials containing a crack along the bond. From equilibrium equation, stress and strain relationship, conditions of continuity across interface and free crack surface, the stress and displacement fields were obtained. The eigenvalue of these fields is lambda. Semi-weight functions were obtained as virtual displacement and stress fields with eigenvalue-lambda. Integral expression of fracture parameters, K-I and K-II, were obtained from reciprocal work theorem with semi-weight functions and approximate displacement and stress values on any integral path around crack tip. The calculation results of applications show that the semi-weight function method is a simple, convenient and high precision calculation method.