Realization of MMI power splitter by UV-light imprinting technique using hybrid sol-gel SiO2 materials

An efficient fabrication scheme of buried ridge waveguide devices is demonstrated by UV-light imprinting technique using organic-in organic hybrid sol-gel Zr-doped SiO2 materials. The refractive indices of a guiding layer and a cladding layer for the buried ridge waveguide structure are 1.537 and 1.492 measured at 1550 nm, respectively. The tested results show more circular mode profiles clue to existence of the cladding layer. A buried ridge single-mode waveguide operating at 1550 nm has a low propagation loss (0.088 dB/cm) and the 1 x 2 MMI power splitter exhibits uniform outputs, with a very low splitting loss of 0.029 dB at 1549 nm.

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 mm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 mu m. (C) 2008 Optical Society of America.

Design and realization of a microracetrack resonator based polarization splitter in silicon-on-insulator

An efficient polarization splitter based on a microracetrack resonator in silicon-on-insulator has been designed and realized using electron beam lithography and inductively coupled plasma etching. Polarization-dependent waveguides and the microracetrack resonator are combined and exploited to split two orthogonal polarizations. Rib waveguides are employed to enhance the coupling efficiency for the transverse-electric mode and endow the resonator with high performance for both polarizations. In experiments, a splitting ratio has been achieved of about 20 dB at the drop port around 1550 nm for each extracted polarization, in good agreement with the prediction.

Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique

Self-assembled InAs quantum wires (QWRs) on InP(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. Atom force microscope, Transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. We proposed that, by carefully adjusting composition of InAlGaAs buffer layer and strain compensating spacer layers, stacked QWRs with high uniformity could be achieved. In addition, the formation mechanism and vertical anti-correlation of QWRs are also discussed. (c) 2005 American Institute of Physics.

A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

Realization of an ultracompact low-loss photonic crystal corner mirror

We report on the realization and characterization of an ultracompact, low-loss, and broadband corner mirror based on photonic crystals (PCs). By modifying the boundary layers of the PC region, extra losses of 1.1 +/- 0.4 dB per corner mirror are achieved for transverse-electronic polarization for silicon-on-insulator ridge waveguides fabricated by electron beam lithography and inductively coupled plasma etching. Dimensions of the PC corner mirror are less than 7 x 7 mu m(2), which are only about one tenth of conventional waveguide corner mirrors.

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

Realization of low threshold of InGaAs/InAlAs quantum cascade laser

By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1 mum is operated at the threshold of 0.73 kA/cm(2) at liquid nitrogen temperature with the repetition rate of 10kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results. (C) 2000 American Institute of Physics. [S0021-8979(00)08922-2].

Realization of SOI submicrometer optical waveguide components - art. no. 68380L

Submicrometer channel and rib waveguides based on SOI (Silicon-On-Insulator) have been designed and fabricated with electron-beam lithography and inductively coupled plasma dry etching. Propagation loss of 8.39dB/mm was measured using the cut-back method. Based on these so-called nanowire waveguides, we have also demonstrated some functional components with small dimensions, including sharp 90 degrees bends with radius of a few micrometers, T-branches, directional couplers and multimode interferometer couplers.

Design and Realization of Index-Coupled DFB Laser with Sampled Grating

An index-coupled distributed feedback laser with the sampled grating has been designed and fabricated. The +1(st) order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5329 mu m in the experiment. The sampled grating is formed by a conventional holographic exposure combined with the usual photolithography. The typical threshold current of DFB laser with the sampled grating is 25mA, and the optical output is about 10mW at the injected current of 100mA.

Proposed scheme for parallel 10Gb/s VSR system and its Verilog HDL realization

This paper proposes a novel and innovative scheme for 10Gb/s parallel Very Short Reach (VSR) optical communication system. The optimized scheme properly manages the SDH/SONET redundant bytes and adjusts the position of error detecting bytes and error correction bytes. Compared with the OIF-VSR4-01.0 proposal, the scheme has a coding process module. The SDH/SONET frames in transmission direction are disposed as follows: (1) The Framer-Serdes Interface (FSI) gets 16x622.08Mb/s STM-64 frame. (2) The STM-64 frame is byte-wise stripped across 12 channels, all channels are data channels. During this process, the parity bytes and CRC bytes are generated in the similar way as OIF-VSR4-01.0 and stored in the code process module. (3) The code process module will regularly convey the additional parity bytes and CRC bytes to all 12 data channels. (4) After the 8B/10B coding, the 12 channels is transmitted to the parallel VCSEL array. The receive process approximately in reverse order of transmission process. By applying this scheme to 10Gb/s VSR system, the frame size in VSR system is reduced from 15552x12 bytes to 14040x12 bytes, the system redundancy is reduced obviously.

Design and Realization of Resonant Tunneling Diodes with New Material Structure

A new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.