Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique


Autoria(s): Huang, XQ; Wang, YL; Li, L; Liang, L; Liu, FQ
Data(s)

2005

Resumo

Self-assembled InAs quantum wires (QWRs) on InP(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. Atom force microscope, Transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. We proposed that, by carefully adjusting composition of InAlGaAs buffer layer and strain compensating spacer layers, stacked QWRs with high uniformity could be achieved. In addition, the formation mechanism and vertical anti-correlation of QWRs are also discussed. (c) 2005 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/8574

http://www.irgrid.ac.cn/handle/1471x/63817

Idioma(s)

英语

Fonte

Huang, XQ; Wang, YL; Li, L; Liang, L; Liu, FQ .Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique ,APPLIED PHYSICS LETTERS,AUG 22 2005,87 (8):Art.No.083108

Palavras-Chave #半导体材料 #INP(001)
Tipo

期刊论文