Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
Data(s) |
2005
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Resumo |
Self-assembled InAs quantum wires (QWRs) on InP(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. Atom force microscope, Transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. We proposed that, by carefully adjusting composition of InAlGaAs buffer layer and strain compensating spacer layers, stacked QWRs with high uniformity could be achieved. In addition, the formation mechanism and vertical anti-correlation of QWRs are also discussed. (c) 2005 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Huang, XQ; Wang, YL; Li, L; Liang, L; Liu, FQ .Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique ,APPLIED PHYSICS LETTERS,AUG 22 2005,87 (8):Art.No.083108 |
Palavras-Chave | #半导体材料 #INP(001) |
Tipo |
期刊论文 |