Transmission Electron Microscopy Characterization of Laser Welding Cast Ni-Based Superalloy K418 Turbo Disk And Alloy Steel 42Crmo Shaft

Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are gamma-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni-3 Al gamma' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles. (c) 2007 Elsevier B.V. All rights reserved.

Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (Si(0.76)Geo(0.24)) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.

Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer

A transmission electron microscopy study of triple-ribbon contrast features in a ZnTe layer grown epitaxially on a vicinal GaAs (001) substrate is reported. The ribbons go through the layer as threading dislocations near the [<(11)over bar 2>](111) or [112](<(11)over bar 1>) directions. Each of these (with a 40 nm width) has two narrow parts enclosed by three partial dislocations (with a 20 nm spacing). By contrast analysis and contrast simulation, the ribbons have been shown to be composed of two partially overlapping stacking faults. Their origin is attributed to a forced reaction between two crossing perfect misfit dislocations.

TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING

We report on the first study of N+ -implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing-Henry electron optical system as a spectrometer. The inelastic images, energy window set at DELTA-E = 16 eV and DELTA-E = 25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

Precipitation of Ge nanoparticles from GeO2 glasses in transmission electron microscope

We show, using spatially resolved energy loss spectroscopy in a transmission electron microscopy (TEM), that GeO2 and GeO2-SiO2 glasses are extremely sensitive to high energy electrons. Ge nanoparticles can be precipitated in GeO2 glasses efficiently by the high-energy electron beam of a TEM. This is relevant to TEM characterization of luminescent Ge nanoparticles in silicate glasses, which may produce artificial results. (C) 2005 American Institute of Physics.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.

THE USE OF LIGHT-MICROSCOPY FOR INVESTIGATIONS OF EPITAXIAL-GROWTH OF POLYMERS ON POLYMERIC SUBSTRATES

In order to study the oriented (epitaxial) crystallization of thermoplastic polymers on oriented polymer substrates, generally the transmission electron microscopy (TEM) is used. With this instrument, the crystallized material can easily be resolved and orientation relationships can be monitored by electron diffraction. Disadvantages are the time consuming sample preparations and difficulties in the in-situ observations of the crystallization events, because of the radiation sensitivity of the polymer crystals. It is demonstrated that these disadvantages of the TEM can be eleminated by the use of different methods of light optical contrasts under specific preparation conditions of the samples and that the optical microscopy being a supplementary method to the TEM for investigations of epitaxial crystallization.

Shear Localization In Dynamic Deformation: Microstructural Evolution

Investigations made by the authors and collaborators into the microstructural aspects of adiabatic shear localization are critically reviewed. The materials analyzed are low-carbon steels, 304 stainless steel, monocrystalline Fe-Ni-Cr, Ti and its alloys, Al-Li alloys, Zircaloy, copper, and Al/SiCp composites. The principal findings are the following: (a) there is a strain-rate-dependent critical strain for the development of shear bands; (b) deformed bands and white-etching bands correspond to different stages of deformation; (c) different slip activities occur in different stages of band development; (d) grain refinement and amorphization occur in shear bands; (e) loss of stress-carrying capability is more closely associated with microdefects rather than with localization of strain; (f) both crystalline rotation and slip play important roles; and (g) band development and band structures are material dependent. Additionally, avenues for new research directions are suggested.