Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (Si(0.76)Geo(0.24)) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.

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Made available in DSpace on 2010-09-07T13:08:47Z (GMT). No. of bitstreams: 1 Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy.pdf: 455210 bytes, checksum: 3cdae72b8120e24adccaa52baf5346c7 (MD5) Previous issue date: 2010

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