Effect of alkyl substituents in BODIPYs: a comparative DFT computational investigation

Random changes in the alkyl substitution patterns of fluorescent dyes, e.g. BODIPYs, are often accompanied by significant changes in their photophysical properties. To understand such alterations in properties in closely related molecular systems, a comparative DFT (density functional theory) computational investigation was performed in order to comprehend the effects of alkyl substitution in controlling the structural and electronic nature of BODIPY dyes. In this context, a systematic strategy was utilized, considering all possible outcomes of constitutionally-isomeric molecules to understand the alkyl groups' effects on the BODIPY molecules. Four different computational methods {i.e. B3LYP/631G(d); B3LYP/6-311++ G(d,p); wb97xd/6-311++ G(d,p) and mpw1pw91/6-311++ G(d,p)} were employed to rationalize the agreement of the trends associated with the molecular properties. In line with experimental observations, it was found that alkyl substituents in BODIPY dyes situated at 3/5-positions effectively participate in stabilization as well as planarization of such molecules. Screening of all the possible isomeric molecular systems was used to understand the individual properties and overall effects of the typical alkyl substituents in controlling several basic properties of such BODIPY molecules.

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

Preparation of silica abrasives from water glass and application in silicon wafer polishing

Chemical mechanical polishing technique is more frequently adopted for planarization in integrated circuit fabrication. The silica abrasives in colloidal state are fabricated with the sodium silicate solution as raw materials through the polymerization reaction among silicic acid molecules. By continuous injection of silicic acid into the preexisting silica solution, the diameter of silica nanoparticles increases. The different sized silica nanoparticles are imaged by scanning electron microscopy, and the dried silica are characterized by X-ray diffraction and thermal analysis. The polishing test on silicon wafer with as-fabricated silica abrasives shows that the surface flatness reaches 1.1 nm roughness, however, micro scratches are still present in the surface.

Characterization and optimization to improve uneven surface on MEMS bridge fabrication

This paper presents an optimized fabrication method for developing a freestanding bridge for RF MEMS switches. In this method, the sacrificial layer is patterned and hard baked a 220°C for 3min, after filling the gap between the slots of the coplanar waveguide. Measurement results by AFM and SEM demonstrate that this technique significantly improves the planarity of the sacrificial layer, reducing the uneven surface to less than 20nm, and the homogeneity of the Aluminum thickness across the bridge. Moreover, a mixture of O2, Ar and CF4 was used and optimized for dry releasing of the bridge. A large membrane (200×100μm2) was released without any surface bending. Therefore, this method not only simplifies the fabrication process, but also improves the surface flatness and edge smoothness of the bridge. This fabrication method is fully compatible with standard silicon IC technology.

C 3-symmetric discotic liquid crystalline materials for molecular electronics: versatile synthesis and self-organization

This thesis presents the versatile synthesis and self-organization of C3-symmetric discotic nanographene molecules as well as their potential applications as materials in molecular electronics. The details can be described as follows: 1) A novel synthetic strategy towards properly designed C3 symmetric 1,3,5-tris-2’arylbenzene precursors has been developed. After the final planarization by treatment with FeCl3 under mild conditions, for the first time, it became possible to access a variety of new C3-symmetric hexa-peri-hexabenzocoronenes (HBCs) and a series of triangle-shaped nanographenes. D3 symmetric HBC with three alkyl substituents and C2 symmetric HBC with two alkyl substituents were synthesized and found to show the surprising decrease of isotropic points., the self-assembly at the liquid-solid interface displayed a unique zigzag and flower patterns. 2) Triangle-shaped discotics revealed a unique self-assembly behavior in solution, solid state as well as at the solution-substrate interface. A mesophase stability over the broad temperature range with helical supramoelcular arrangement were observed in the bulk state. The honeycomb pattern as the result of novel self-assembly was presented. Triangle-shaped discotics with swallow alkyl tails were fabricated into photovoltaic devices, the supramolecular arrangement upon thermal treatment was found to play a key role in the improvement of solar efficiency. 3) A novel class of C3 symmetric HBCs with alternating polar/apolar substituents was synthesized. Their peculiar self-assembly in solution, in the bulk and on the surface were investigated by NMR techniques, X-ray diffraction as well as different electron microscope techniques. 4) A novel concept for manipulating the intracolumnar stacking of discotics and thus for controlling the helical pitch was presented. A unique staggered stacking in the column was achieved for the first time. Theoretical simulations confirmed this self-organization and predicted that this packing should show the highest charge carrier mobility for all discotics.

Nanographene als funktionale Materialien und synthetische Herausforderung

Im Rahmen dieser Arbeit wurden neuartige funktionale Nanographene synthetisiert und hinsichtlich ihrer strukturellen und elektronischen Eigenschaften charakterisiert. Basierend auf dem Strukturmotiv des Graphens konnten anellierte polyzyklische aromatische Kohlenwasserstoffe (PAKs) mit unterschiedlichen Seitenverhältnissen strukturdefiniert erhalten und gezielt in der Peripherie funktionalisiert werden. Basierend auf dem Synthesekonzept einer „Vorplanarisierung“ konnten Nanographen-Scheiben mit einem Durchmesser von bis zu 3 nm in hoher Reinheit erhalten werden. Durch die Entwicklung von Polyphenylen-Vorläufern mit einem gewinkelten Rückgrat konnten erstmals defektfreie und lösliche Nanographen-Streifen (GNRs) mit Breiten von 1,0 - 2,1 nm und Längen von über 40 nm synthetisiert werden.rnrnAm Hexa-peri-hexabenzocoronen (HBC) war es möglich, durch die Einführung kurzer linearer Alkylreste in der Peripherie den inter- und intrakolumnaren Abstand nach Selbstorganisation zu reduzieren. In Mischungen mit Perylentetracarboxydiimid (PDI) als Akzeptor konnte durch eine erhöhte Dichte und eine verbesserte Ladungsträgermobilität eine relative Steigerung der Effizienz von Donor-Akzeptor-Heteroübergangs-Solarzellen um 9 % erreicht werden. Eine kovalente Verknüpfung von HBC und PDI erlaubte hier die vollständige Kontrolle der supramolekularen Organisation, des Phasenverhaltens sowie des Abstandes zwischen Donor und Akzeptor.rnrnBasierend auf den im Rahmen dieser Arbeit entwickelten Synthesekonzepten, eröffnen sich nun zahlreiche Möglichkeiten zur Entwicklung weiterer Nanographene, die entsprechend der gewünschten Anwendung funktionalisiert werden können und ein besseres Verständnis der Eigenschaften graphenartiger Materialien erlauben werden.

High-density metallic nano-emitter arrays and their field emission characteristics

We report the fabrication and field emission properties of high-density nano-emitter arrays with on-chip electron extraction gate electrodes and up to 106 metallic nanotips that have an apex curvature radius of a few nanometers and a the tip density exceeding 108 cm−2. The gate electrode was fabricated on top of the nano-emitter arrays using a self-aligned polymer mask method. By applying a hot-press step for the polymer planarization, gate–nanotip alignment precision below 10 nm was achieved. Fabricated devices exhibited stable field electron emission with a current density of 0.1 A cm−2, indicating that these are promising for applications that require a miniature high-brightness electron source.