In vivo studies on toxin accumulation in liver and ultrastructural changes of hepatocytes of the phytoplanktivorous bighead carp i.p.-injected with extracted microcystins

Phytoplanktivorous bighead carp were injected i.p. with extracted microcystins (mainly MC-RR and -LR) at two doses, 200 and 500 MC-LReq. mu g kg(-1) bw, and the changes in extractable MCs in liver and in the ultrastructure of hepatocytes were studied at 1, 3, 12, 24 and 48 h after injection. Quantitative and qualitative determinations of MCs in the liver were conducted by HPLC and LC-MS, respectively. MC concentration in the liver reached the maxima at 12 It (2.89 mu g MCs g(-1) dry weight at the lower dose) or at 3 h (5.43 mu g MCs g(-1) dry weight at the higher dose) post-injection, followed by sharp declines afterwards, whereas the ultrastructural changes of hepatocytes in both dose groups suggest progressive increases in severity toward the directions of apoptosis and necrosis from I to 24 h, respectively. There were two new findings in fish: widening of intercellular spaces was among the early ultrastructural changes induced by MCs and ultrastructural recovery of hepatocytes was evident at 48 h post-injection in both dose groups. Both the present and previous studies suggest that with in vivo or in vitro exposure to microcystins, hepatocyte damage in fish tends to proceed toward the direction of apoptosis at lower MC concentrations but toward the direction of necrosis at high MC concentrations. The temporal dynamics of MCs in the liver suggest that bighead carp may have a mechanism to degrade or bind MC-LR actively after it enters the blood system. (c) 2005 Elsevier Ltd. All rights reserved.

Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination

We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs2, Cd3As2, InAs, InSb, Hg1−xCdxTe, In1−xGaxAsyP1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb1−xSnxSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices.

I*(P-2(1/2)) production from CH3I photodissociation at 236 nm

The quantum yield of I*((2)p(1/2)) production from CH3I photolysis at 236 nm in the gas phase has been measured as 0.69 +/- 0.03. The implication is that direct excitation to the (1)Q(1) excited state is significant at this wavelength. The dynamics of I* formation at other excitation energies covering the entire A-band of absorption of CH3I has been discussed in the light of this measurement.

Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

Study on the perfection of in situ P-injection synthesis LEC-InP single crystals

Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.

Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice

Both the photoluminescence peaks corresponding to the vertical transitions and the nonvertical transitions in an n-i-p-i GaAs superlattice are clearly observed. The redshifts of the two peaks with increasing temperature are: discussed in terms of the temperature-dependent carrier separation effect.

Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice

Large blueshift and linewidth increase in photoluminescence (PL) spectra of InAs quantum dots (QD's) in n-i-p-i GaAs superlattice were observed. By increasing the excitation intensity from 0.5 to 32 W/cm(2), the PL peak position blueshifted 18 meV, and the linewidth increased by 20 meV. Such large changes are due to the state-filling effects of the QD's resulted from the separation of photogenerated electrons and holes caused by the doping potential.

Optical properties of InAs self-organized quantum dots in n-i-p-i GaAs superlattices

The optical properties of InAs quantum dots in n-i-p-i GaAs superlattices are investigated by photoluminescence (PL) characterization. We have observed an anomalously large blueshift of the PL peak and increase of the PL linewidth with increasing excitation intensity, much smaller PL intensity decrease, and faster PL peak redshift with increasing temperature as compared to conventional InAs quantum dots embedded in intrinsic GaAs barriers. The observed phenomena can all be attributed to the filling effects of the spatially separated photogenerated carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)03515-4].

Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells

We report the observation of the field-driven blue shift at near absorption edge in the photo-current response spectra of delta-doped Si n-i-p-i multiple quantum wells due to the widening of the effective energy gap. This phenomenon differs from the observed results in GaAs/AlGaAs and GeSi/Si superlattices, because the physical mechanisms of forming energy band in these superlattice samples are different. Our experimental results are interpreted satisfactorily by the theoretical calculation. (C) 1999 Elsevier Science Ltd. All rights reserved.

δ掺杂硅n-i-p-i结构多量子阱吸收边的漂移

该文报告了在δ掺杂硅n-i-p-i结构多量子阱中使用光电流技术观测到吸收边的场驱动蓝移，它不同于在GaAs和GeSi超晶格中观察到的结果。这个新现象能够被载流子注入引起有效带隙的展宽所解释。基于有效质量近似，计算了自洽势和有效带隙随额外载流子浓度的变化，理论结果证实了实验结果的正确性。