Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice
Data(s) |
2000
|
---|---|
Resumo |
Both the photoluminescence peaks corresponding to the vertical transitions and the nonvertical transitions in an n-i-p-i GaAs superlattice are clearly observed. The redshifts of the two peaks with increasing temperature are: discussed in terms of the temperature-dependent carrier separation effect. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang JZ; Wang ZG; Wang ZM; Feng SL; Yang Z .Temperature dependence of photoluminescence of an n-i-p-i GaAs superlattice ,PHYSICAL REVIEW B,2000,62(11):6956-6958 |
Palavras-Chave | #半导体物理 #DOPING SUPER-LATTICES #SEMICONDUCTORS #CRYSTALS |
Tipo |
期刊论文 |