Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice

Large blueshift and linewidth increase in photoluminescence (PL) spectra of InAs quantum dots (QD's) in n-i-p-i GaAs superlattice were observed. By increasing the excitation intensity from 0.5 to 32 W/cm(2), the PL peak position blueshifted 18 meV, and the linewidth increased by 20 meV. Such large changes are due to the state-filling effects of the QD's resulted from the separation of photogenerated electrons and holes caused by the doping potential.