Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

The use of gate-to-drain capacitance (C-gd) measurement as a tool to characterize hot-carrier-induced charge centers in submicron n- and p-MOSFET's has been reviewed and demonstrated. By analyzing the change in C-gd measured at room and cryogenic temperature before and after high gate-to-drain transverse field (high field) and maximum substrate current (I-bmax) stress, it is concluded that the degradation was found to be mostly due to trapping of majority carriers and generation of interface states. These interface states were found to be acceptor states at top half of band gap for n-MOSFETs and donor states at bottom half of band gap for p-MOSFETs. In general, hot electrons are more likely to be trapped in gate oxide as compared to hot holes while the presence of hot holes generates more interface states. Also, we have demonstrated a new method for extracting the spatial distribution of oxide trapped charge, Q(ot), through gate-to-substrate capacitance (C-gb) measurement. This method is simple to implement and does not require additional information from simulation or detailed knowledge of the device's structure. (C) 2001 Elsevier Science Ltd. All rights reserved.

A new method of threshold voltage extraction via MOSFET gate-to-substrate capacitance measurement

A new method to extract MOSFET's threshold voltage VT by measurement of the gate-to-substrate capacitance C-gb of the transistor is presented. Unlike existing extraction methods based on I-V data, the measurement of C-gb does not require de drain current to now between drain and source thus eliminating the effects of source and drain series resistance R-S/D, and at the same time, retains a symmetrical potential profile across the channel. Experimental and simulation results on devices with different sizes are presented to justify the proposed method.

Relay card for capacitance measurements

In this bachelor's thesis a relay card for capacitance measurements was designed, built and tested. The study was made for the research and development laboratory of VTI Technologies, which manufactures capacitive silicon micro electro mechanical accelerometers and pressure sensors. As the size of the sensors is decreasing the capacitance value of the sensors also decreases. The decreased capacitance causes a need for new and more accurate measurement systems. The technology used in the instrument measuring the capacitance dictates a framework how the relay card should be designed, thus the operating principle of the instrument must be known. To achieve accurate results the measurement instrument and its functions needed to be used correctly. The relay card was designed using printed circuit board design methods that minimize interference coupling to the measurement. The relay card that was designed in this study is modular. It consists of a separate CPU card, which was used to control the add-on cards connected to it. The CPU card was controlled from a computer through a serial bus. Two add-on cards for the CPU card were designed in this study. The first one was the measurement card, which could be used to measure 32 capacitive sensors. The second add-on card was the MUX card, which could be used to switch between two measurement cards. The capacitance measurements carried out through the MUX card and the measurement cards were characterized with a series of test measurements. The test measurement data was then analysed. The relay card design was confirmed to work and offer accurate measurement results up to a measurement frequency of 10 MHz. The length of the measurement cables limited the measurement frequency.

Investigation of dielectric and elastic properties of selected dielectric ceramics and oxide glasses

The dielectric and elastic properties are of considerable significance to the science and technology of matter in the solid state. The study of these properties give information about the magnitude of the forces and nature of the bonding between the atoms. Our aim has been to investigate systematically the effect of doping of an appropriate element on the elastic and dielectric properties of selected dielectric ceramics and oxide glasses. These materials have got wide technological applications due to their interesting electrical, optical, thermal and elastic behaviour. Ultrasound propagation and capacitance measurement techniques have been employed for the systematic investigation of the elastic and dielectric properties of selected number of these materials. Details of the work done and results obtained are presented in this thesis.

Preparação e caracterização de blendas de poliuretano derivado do óleo de mamona e poli (o-metoxianilina) e sua avaliação como sensor

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Moisture Distribution in Partially Saturated Concrete Studied by Impedance Spectroscopy

The moisture content and its spatial distribution has a great influence on the durability properties of concrete structures. Several non-destructive techniques have been used for the determination of the total water content, but moisture distribution is difficult to determine. In this paper impedance spectroscopy is used to study the water distribution in concrete samples with controlled and homogeneously distributed moisture contents. The technique is suitable for the determination of water distribution inside the sample, using the appropriate equivalent circuits. It is shown that using the selected drying procedures there is no change in the solid phase of the samples, although the technique can only be used for the qualitative study of variations in the solid phase when samples are too thick. The results of this work show that for a wide range of concrete percentages of saturation, from full to 18 % saturation, practically all the pores keep at least a thin layer of electrolyte covering their walls, since the capacitance measurement results are practically independent of the saturation degree.

Phase fraction distribution measurement of oil-water flow using a capacitance wire-mesh sensor

In this paper, a novel wire-mesh sensor based on permittivity (capacitance) measurements is applied to generate images of the phase fraction distribution and investigate the flow of viscous oil and water in a horizontal pipe. Phase fraction values were calculated from the raw data delivered by the wire-mesh sensor using different mixture permittivity models. Furthermore, these data were validated against quick-closing valve measurements. Investigated flow patterns were dispersion of oil in water (Do/w) and dispersion of oil in water and water in oil (Do/w&w/o). The Maxwell-Garnett mixing model is better suited for Dw/o and the logarithmic model for Do/w&w/o flow pattern. Images of the time-averaged cross-sectional oil fraction distribution along with axial slice images were used to visualize and disclose some details of the flow.

Simulation of interface states effect on the scanning capacitance microscopy measurement of p-n junctions

A two-dimensional numerical simulation model of interface states in scanning capacitance microscopy (SCM) measurements of p-n junctions is presented-In the model, amphoteric interface states with two transition energies in the Si band gap are represented as fixed charges to account for their behavior in SCM measurements. The interface states are shown to cause a stretch-out-and a parallel shift of the capacitance-voltage characteristics in the depletion. and neutral regions of p-n junctions, respectively. This explains the discrepancy between - the SCM measurement and simulation near p-n junctions, and thus modeling interface states is crucial for SCM dopant profiling of p-n junctions. (C) 2002 American Institute of Physics.

Measurement of Photo Capacitance in Amorphous Silicon Photodiodes

This paper discusses the photodiode capacitance dependence on imposed light and applied voltage using different devices. The first device is a double amorphous silicon pin-pin photodiode; the second one a crystalline pin diode and the last one a single pin amorphous silicon diode. Double amorphous silicon diodes can be used as (de)multiplexer devices for optical communications. For short range applications, using plastic optical fibres, the WDM (wavelength-division multiplexing) technique can be used in the visible light range to encode multiple signals. Experimental results consist on measurements of the photodiode capacitance under different conditions of imposed light and applied voltage. The relation between the capacitive effects of the double diode and the quality of the semiconductor internal junction will be analysed. The dynamics of charge accumulations will be measured when the photodiode is illuminated by a pulsed monochromatic light.

Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling

Controlled polishing procedures were used to produce both uniformly doped and p-n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p-n junctions significantly. SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation. (c) 2005 American Institute of Physics.

Modelling the effects of interface traps on scanning capacitance microsopy dC/dV measurement

Scanning capacitance microscopy (SCM) measurement is a proposed tool for dopant profile extraction for semiconductor material. The influence of interface traps on SCM dC/dV data is still unclear. In this paper we report on the simulation work used to study the nature of SCM dC/dV data in the presence of interface traps. A technique to correctly simulate dC/dV of SCM measurement is then presented based on our justification. We also analyze how charge of interface traps surrounding SCM probe would affect SCM dC/dV due the small SCM probe dimension.

Conclusions on the measurement of arterial wall thickness: anatomic, physiologic and methodologic considerations

AIM: To discuss the use of new ultrasonic techniques that make it possible to visualize elastic (carotid) and muscular (radial) capacitance arteries non-invasively. RESULTS OF DATA REVIEW: Measurements of carotid wall thickness and the detection of atheromas are related to arterial pressure, to other risk factors and to the risk of subsequent complications. The use of high-frequency ultrasound (7.5-10 MHz), measurements of far wall thicknesses in areas free of atheromas at end-diastole (by ECG gating or pressure waveform recording) and descriptions of the size and characteristics of atherosclerotic plaques allow a non-invasive assessment of vascular hypertrophy and atherosclerosis in hypertensive patients. CONCLUSIONS: Careful attention to methodologic and physiologic factors is needed to provide accurate information about the anatomy of the dynamically pulsating arterial tree.

Elucidating capacitance and resistance terms in confined electroactive molecular layers

Electrochemical analyses on confined electroactive molecular layers, herein exemplified with electroactive self-assembled monolayers, sample current contributions that are significantly influenced by additional nonfaradaic and uncompensated resistance effects that, though unresolved, can strongly distort redox analysis. Prior work has shown that impedance-derived capacitance spectroscopy approaches can cleanly resolve all contributions generated at such films, including those which are related to the layer dipolar/electrostatic relaxation characteristics. We show herein that, in isolating the faradaic and nonfaradaic contributions present within an improved equivalent circuit description of such interfaces, it is possible to accurately simulate subsequently observed cyclic voltammograms (that is, generated current versus potential patterns map accurately onto frequency domain measurements). Not only does this enable a frequency-resolved quantification of all components present, and in so doing, a full validation of the equivalent circuit model utilized, but also facilitates the generation of background subtracted cyclic voltammograms remarkably free from all but faradaic contributions. © 2012 American Chemical Society.

A Facile Measurement of Heterogeneous Electron Transfer Kinetics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)