An ambient proof and wide tuning range LC VCO with automatic amplitude control for tuner applications

This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.

A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications

This paper presents an LC VCO with auto-amplitude control （AAC）, in which pMOS FETs are used,and the varactors are directly connected to ground to widen the linear range of Kvco. The AAC circuitry adds little noise to the VCO but provides it with robust performance over a wide temperature and carrier frequency range.The VCO is fabricated in a chartered 50GHz 0.35μm SiGe BiCMOS process. The measurements show that it has - 127. 27dBc/Hz phase noise at 1MHz offset and a linear gain of 32.4MHz/V between 990MHz and 1.14GHz.The whole circuit draws 6. 6mA current from 5V supply.

A 60 GHz wide tuning range SiGe bipolar VCO for HDMI and wireless docking applications

A wide tuning range voltage controlled oscillator (VCO) with novel architecture is proposed in this work. The entire circuit consists of a VCO core, a summing circuit, a single-ended to differential (STD) converter and a buffer amplifier. The VCO core oscillates at half the desired frequency and the second harmonic of the VCO core is extracted by the summing circuit, which is then converted to a differential pair by the STD. The entire VCO circuit operates from 58.85 to 70.85 GHz with 20% frequency tuning range. The measured VCO gain is less than 1.6 GHz/V. The measured phase noise at 3 MHz offset is less than -78 dBc/Hz across the entire tuning range. The differential phase error of the output signals is measured by down converting the VCO output signals to low gigahertz frequency using an on-chip mixer. The measured differential phase error is less than 8°. The VCO circuit, which is constructed using 0.35 µm SiGe technology, occupies 770 × 550 µm2 die area and consumes 62 mA under 3.5 V supply.

SiGe V Band Wide Tuning-Range VCO and Frequency Divider for Phase Locked Loop

A V-band wide tuning-range VCO and high frequency divide-by-8 frequency divider using Infineon 0.35 µm SiGe HBT process are presented in this paper. An LC impedance peaking technique is introduced in the Miller divider to increase the sensitivity and operation frequency range of the frequency divider. Two static frequency dividers implemented using current mode logic are used to realize dividing by 4 in the circuit. The wide tuning range VCO operates from 51.9 to 64.1 GHz i.e. 20.3% frequency tuning range. The measured phase noise at the frequency divider output stage is around -98.5 dBc at 1 MHz. The circuit consumes 200mW and operates from a 3.5Vdc supply, and occupies 0.6×0.8 mm2 die area.

VCO Banda Larga Integrado para Receptor a Cinco Portas

This work presents an wideband ring VCO for cognitive radio five-port based receivers. A three-stage differential topology using transmission gate was adopted in order to maintain wide and linear tuning range and a low phase-noise. Monte-Carlo analysis were performed for phase-shift response of individual stages, which is an important figure of merit in five-port works. It was observed a fairly linear correlation between control voltage and oscillation frequency in the range between 200 MHz and 1800 MHz. The VCO was preliminarily designed for IBM 130nm CMOS technology

A low-voltage low-sensitivity sinusoidal VCO for DPLL realizations

A quasi-sinusoidal linearly tunable OTA-C VCO built with triode-region transconductors is presented. Oscillation upon power-on is ensured by RHP poles associated with gate-drain capacitances of OTA input devices. Since the OTA nonlinearity stabilizes the amplitude, the oscillation frequency f0 is first-order independent of VDD, making the VCO adequate to mixed-mode designs. A range of simulations attests the theoretical analysis. As part of a DPLL, the VCO was prototyped on a 0.8μm CMOS process, occupying an area of 0.15mm2. Nominal f0 is 1MHz, with K VCo=8.4KHz/mV. Measured sensitivity to VDD is below 2.17, while phase noise is -86dBc at 100-KHz offset. The feasibility of the VCO for higher frequencies is verified by a redesign based on a 0.35μm CMOS process and VDD=3.3V, with a linear frequency-span of l3.2MHz - 61.5MHz.

Diseño de un oscilador controlado por tensión (VCO) en tecnología SiGe 0.35 µm para el estándar DVB-H

Presentación del Proyecto Fin de Carrera titulado "DISEÑO DE UN OSCILADOR CONTROLADO POR TENSIÓN (VCO) EN TECNOLOGÍA SiGe 0.35 µm PARA EL ESTÁNDAR DVB-H"

Guía metodológica de apoyo para la gestión de riesgos en proyectos de consultoría. Caso de estudio firma VCO S.A.

Tesis (Maestría en Ingeniería).-- Universidad de La Salle. Facultad de Ingeniería. Maestría en Ingeniería, 2015

Quadrature generation techniques for frequency multiplication based oscillators

Frequency multiplication (FM) can be used to design low power frequency synthesizers. This is achieved by running the VCO at a much reduced frequency, while employing a power efficient frequency multiplier, and also thereby eliminating the first few dividers. Quadrature signals can be generated by frequency- multiplying low frequency I/Q signals, however this also multiplies the quadrature error of these signals. Another way is generating additional edges from the low-frequency oscillator (LFO) and develop a quadrature FM. This makes the I-Q precision heavily dependent on process mismatches in the ring oscillator. In this paper we examine the use of fewer edges from LFO and a single stage polyphase filter to generate approximate quadrature signals, which is then followed by an injection-locked quadrature VCO to generate high- precision I/Q signals. Simulation comparisons with the existing approach shows that the proposed method offers very good phase accuracy of 0.5deg with only a modest increase in power dissipation for 2.4 GHz IEEE 802.15.4 standard using UMC 0.13 mum RFCMOS technology.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.