The role of space charge formation in the generation of thermally stimulated current (TSC) spectroscopy data for a model amorphous drug system

Thermally stimulated current (TSC) spectroscopy is attracting increasing attention as a means of materials characterization, particularly in terms of measuring slow relaxation processes in solid samples. However, wider use of the technique within the pharmaceutical field has been inhibited by difficulties associated with the interpretation of TSC data, particularly in terms of deconvoluting dipolar relaxation processes from charge distribution phenomena. Here, we present evidence that space charge and electrode contact effects may play a significant role in the generation of peaks that have thus far proved difficult to interpret. We also introduce the use of a stabilization temperature in order to control the space charge magnitude. We have studied amorphous indometacin as a model drug compound and have varied the measurement parameters (stabilization and polarization temperatures), interpreting the changes in spectral composition in terms of charge redistribution processes. More specifically, we suggested that charge drift and diffusion processes, charge injection from the electrodes and high activation energy charge redistribution processes may all contribute to the appearance of shoulders and 'spurious' peaks. We present recommendations for eliminating or reducing these effects that may allow more confident interpretation of TSC data.

Electrical conductivity and thermally stimulated current in the paraelectric phase of (NH4)2SO4

Anomalous variations of d.c. electrical conductivity with temperature are observed in ammonium sulphate single crystals, suggesting a possible phase transition at 150°C. Measurements of thermally stimulated current also support these results. The mechanism of electrical conduction is explained on the basis of studies made on doped and quenched crystals.

Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script /

Includes bibliographical references (p. 14).

Study of sodium tellurite glass using the thermally stimulated depolarization current technique (TSDC)

In order to have a better understanding of the role of the structure and the defects involved in the polarization processes in an 85TeO(2)-15Na(2)O mol% glass, we used the thermally stimulated depolarization currents (TSDC technique). The TSDC of the non-irradiated sample presented a strong negative peak of current at the temperature of 340 K, preceded by a relatively weak positive peak at about 300 K. after different d.c. voltages of 1200, 1500 and 2000 V were applied. No response was obtained with 1000 V. but the peak intensity increased considerably for voltages above 1200 V. After gamma-irradiation of 25 and 50 KGy doses, a depolarization of the negative peak was observed in the sample submitted to 25 KGy, whereas for the sample irradiated with 50 KGy, six TSDC peaks appeared at regular intervals of 5 KGy, in the temperature range of 100 and 300 K. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

Dielectric spectroscopy and thermally stimulated discharge current in PEEK film

A permissividade complexa de filmes de poli(eter-eter-cetona) (PEEK) foram investigados num grande intervalo de frequência. Não foram observados picos de relaxação no intervalo de frequência de 1,0 Hz a 10(5) Hz, mas no intervalo de baixa frequência (10-4 Hz) há uma evidência de pico, o qual também pode ser observado com medidas de corrente de despolarização termo-estimulada (TSDC). Este pico está relacionado com a transição vítrea do polímero. A energia de ativação relacionada a esta relaxação dipolar foi obtida e ovalor é Ea = 0,44 eV, que é similar à energia de ativação de muitos polímeros sintéticos. As cargas espaciais se mostraram importantes no mecanismo de condução como evidenciado nas medidas da corrente de despolarização.

The application of thermally stimulated processes to the study of poly p-phenylene sulfide

The electrical properties of poly p-phenylene sulfide (PPS) samples sandwiched between metallic electrodes are studied as a function of the applied voltage, temperature, time, electrode materials, and sample thickness. Superlinear current-voltage characteristics are observed, which are explained in terms of Schottky effect and space-charge limited currents (SCLC). The conductivity data for variable-range hopping have also been studied, but the calculated values of density of states are approximately one order of magnitude higher than those obtained by SCLC measurements. From thermally stimulated polarization currents we observed a current peak around 80°C that was related with the glass transition temperature of PPS. © 1993.

Determination of activation energy for thermal regeneration of EL2 from its metastable state by thermally stimulated photocurrent measurements

It is shown that thermally stimulated photocurrent measurements provide a simple and effective method of determining the activation energy of thermal regeneration rate of EL2 from the metastable state to the normal state in undoped semi‐insulating GaAs. The thermal regeneration rate r is found to be 2.5×108 exp(−0.26 eV/kT) s−1.

Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations

Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.

Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property

As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors

Current-based microscopic defect analysis method such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current have been developed over the years at Brookhaven National Laboratory (BNL) for the defect characterizations on heavily irradiated (Phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k Omega cm) Si sensors/detectors. The conventional DLTS method using a capacitance transient is not valid on heavily irradiated high-resistivity Si sensors/detectors. A new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. Optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity Si sensors/detectors. (c) 2006 Published by Elsevier Ltd.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.