Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script /


Autoria(s): Buehler, Martin G.
Data(s)

01/10/1976

Resumo

Includes bibliographical references (p. 14).

Mode of access: Internet.

Formato

bib

bib

bib

Identificador

http://hdl.handle.net/2027/uiug.30112104131450

http://hdl.handle.net/2027/mdp.39015077585142

http://hdl.handle.net/2027/uc1.31210023555764

Idioma(s)

eng

Publicador

Washington : U.S. Dept. of Commerce, National Bureau of Standards : For sale by the Supt. of Docs., U.S. Govt. Print. Off.,

Relação

Defects in PN junctions and MOS capacitors observed using thermally stimulated current and capacitance measurements, videotape script.

Direitos

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Palavras-Chave #Condensateurs électriques #Semiconducteurs #Electric measurements. #Cryostats. #Capacitors #Semiconductors
Tipo

text