Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
Data(s) |
2009
|
---|---|
Resumo |
Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra. Chinese Academy of Sciences National Natural Science Foundation of China National High Technology Research and Development program of China 2006AA03A22 |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gai YQ ; Li JB ; Hou QF ; Wang XL ; Xiao HL ; Wang CM ; Li JM .Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009 ,42(15):Art. No. 155403 |
Palavras-Chave | #半导体物理 #N-TYPE GAN #ELECTRON-MOBILITY TRANSISTORS #VAPOR-PHASE EPITAXY #DEFECTS #THERMOLUMINESCENCE #CARBON #TRAP |
Tipo |
期刊论文 |