Passive pressure coefficients, critical failure surface and its kinematic admissibility

Using a combination of a logarithmic spiral and a straight line as a failure surface, comprehensive charts have been developed to determine the passive earth pressure coefficients and the positions of the critical failure surface for positive as well as negative wall friction angles. Translational movement of the wall has been examined in detail, considering the soil as either an associated flow dilatant material or a non-dilatant material, to determine the kinematic admissibility of the limit equilibrium solutions.

Seismic passive earth pressure coefficients using the method of characteristics

The method of characteristics was used to generate passive earth pressure coefficients for an inclined wall retaining cohesionless backfill material in the presence of pseudostatic horizontal earthquake body forces. The variation of the passive earth pressure coefficients K-pq and K-pgamma with changes in horizontal earthquake acceleration coefficient due to the components of soil unit weight and surcharge pressure, respectively, has been obtained; a closed-form solution for K-pq is also provided. The passive earth resistance has been found to decrease sharply with an increase in the magnitude of horizontal earthquake acceleration. The computed passive earth pressure coefficients were found to be the lowest when compared to all of the previous solutions available in the literature.

Photoluminescence pressure coefficients of InAs/GaAs quantum dots

We have investigated the ground exciton energy pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 21 systems with different quantum dot shape, size, and alloying profile using the atomistic empirical pseudopotential method. Our results confirm the experimentally observed significant reductions of the exciton energy pressure coefficients from the bulk values. We show that the nonlinear pressure coefficients of the bulk InAs and GaAs are responsible for these reductions, and the percentage of the electron wave function on top of GaAs atoms is responsible for the variation of this reduction. We also find a pressure coefficient versus exciton energy relationship which agrees quantitatively with the experimental results. We find linear relationships which can be used to get the information of the electron wave functions from exciton energy pressure coefficient measurements.

Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.

Coeficientes de presión intersticial en el aparato de corte simple = Pore pressure coefficients for simple shear test

La actuación de cargas sobre un suelo saturado, produce, en función de la naturaleza de la solicitación, del tipo de suelo y de las condiciones de drenaje del terreno, un incremento de la presión sobre el agua de los intersticios. Se ha abordado el estudio de la generación de dicha presión intersticial a partir de muestras de suelo blando, normalmente consolidadas, procedentes del subsuelo del Puerto de Barcelona. Para ello se han utilizado los datos de una completa campaña experimental utilizando la máquina de ensayo de corte simple, y tras la adecuada interpretación del ensayo, se identifican los aspectos que se consideran clave para el proceso de generación de presión intersticial en el suelo, según las diferentes situaciones de carga actuante. Como conclusión, se plantea la generalización de la clásica ecuación que Skempton formuló hace casi 60 años y que permite interpretar la generación de presión intersticial para el aparato de ensayo triaxial. ncrease in pore pressure depending on the nature of the excitation, the type of soil and the drainage conditions of the ground are generated by loads acting on a saturated soil. It has approached the study of the generation of the pore pressure from usually consolidated soft soil samples from the basement of the Port of Barcelona. Data from an adequate experimental campaign using simple shear machine have been used, and the aspects that are considered key to the process of generation of pore pressure in the soil under different loading conditions acting have been identified. In conclusion, the generalization of Skempton's classical equation (formulated almost 60 years ago) and the interpretation of the pore pressure generation for triaxial test apparatus have been proposed.

Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Temperature- and pressure-dependent study of Cl-35 NQR frequency and spin lattice relaxation time in 2,3-dichloroanisole

The temperature and pressure dependence of Cl-35 NQR frequency and spin lattice relaxation time (T-1) were investigated in 2,3-dichloroanisole. Two NQR signals were observed throughout the temperature and pressure range studied. T-1 were measured in the temperature range from 77 to 300 K and from atmospheric pressure to 5 kbar. Relaxation was found to be due to the torsional motion of the molecule and also reorientation f motion of the CH3 group. T-1 versus temperature data were analyzed on the basis of Woessner and Gutowsky model, and the activation energy for the reorientation of the CH3 group was estimated. The temperature dependence of the average torsional lifetimes of the molecules and the transition probabilities were also obtained. NQR frequency shows a nonlinear behavior with pressure, indicating both dynamic and static effects of pressure. The pressure coefficients were observed to be positive for both the lines. A thermodynamic analysis of the data was carried out to determine the constant volume temperature coefficients of the NQR frequency. The variation of spin lattice time with pressure was very small, showing that the relaxation is mainly due to the torsional motions of the molecules. Copyright (C) 2010 John Wiley & Sons, Ltd.

Cl-35 NQR frequency and spin lattice relaxation time in 3,4-dichlorophenol as a function of pressure and temperature

The pressure dependences of Cl-35 nuclear quadrupole resonance (NQR) frequency, temperature and pressure variation of spin lattice relaxation time (T-1) were investigated in 3,4-dichlorophenol. T-1 was measured in the temperature range 77-300 K. Furthermore, the NQR frequency and T-1 for these compounds were measured as a function of pressure up to 5 kbar at 300 K. The temperature dependence of the average torsional lifetimes of the molecules and the transition probabilities W-1 and W-2 for the Delta m = +/- 1 and Delta m = +/- 2 transitions were also obtained. A nonlinear variation of NQR frequency with pressure has been observed and the pressure coefficients were observed to be positive. A thermodynamic analysis of the data was carried out to determine the constant volume temperature coefficients of the NQR frequency. An attempt is made to compare the torsional frequencies evaluated from NQR data with those obtained by IR spectra. On selecting the appropriate mode from IR spectra, a good agreement with torsional frequency obtained from NQR data is observed. The previously mentioned approach is a good illustration of the supplementary nature of the data from IR studies, in relation to NQR studies of compounds in solid state.

New observations on the pressure dependence of luminescence from Eu2+-doped MF2 (M = Ca, Sr, Ba) fluorides

The luminescence from Eu2+ ions in MF2 (M = Ca, Sr, Ba) fluorides has been investigated under the pressure range of 0-8 GPa. The emission band originating from the 4f(6)5d(1) -> 4f(7) transition of Eu2+ ions in CaF2 and SrF2 shows the red-shift as increasing pressure with pressure coefficients of -17 meV/GPa for CaF2 and -18 meV/GPa for SrF2. At atmospheric pressure, the emission spectrum of BaF2:Eu2+ comprises two peaks at 2.20 and 2.75 eV from the impurity trapped exciton (ITE) and the self-trapped exciton (STE), respectively. As the pressure is increased, both emission peaks shift to higher energies, and the shifting rate is slowed by the phase transition from the cubic to orthorhombic phase at 4 GPa. Due to the phase transition at 4-5 GPa pressure, the ITE emission disappears gradually, and the STE emission is gradually replaced by the 4f(6)5d(1) -> 4f(7) transition of Eu2+. Above 5 GPa, the pressure behavior of the 4f(6)5d(1) -> 4f(7) transition of EU2+ in BaF2: EU2+ is the same as the normal emission of Eu2+ in CaF2 and SrF2 phosphors.

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.

Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure

The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the ground and the first excited states in large InAs dots was observed. The pressure coefficients of the two emissions were 69 and 72 meV/GPa, respectively. A nonlinear elasticity theory was used to interpret the significantly small pressure coefficients of the large dots. The sequential quenching of the ground and the excited state emissions with increasing pressure suggests that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states. (C) 2004 American Institute of Physics.

Photoluminescence of low-dimensional semiconductor structures under pressure

Photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. The measured pressure coefficients of In0.55Al0.45 As/Al0.5Ga0.5As quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 meV/GPa, respectively. It indicates that these quantum dots are type-I dots. On the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17meV/GPa, indicating the type-II character. The measured pressure coefficient for Mn emission in ZnS:Mn nanoparticles is -34.6meV/GPa, in agreement with the predication of the crystal field theory. However, the DA emission is nearly independent on pressure, indicating that this emission is related to the surface defects in ZnS host. The measured pressure coefficient of Cu emission in ZnS: Cu nanoparticles is 63.2 meV/GPa. It implies that the acceptor level introduced by Cu ions has some character of shallow level. The measured pressure coefficient of Eu emission in ZnS:Eu nanoparticles is 24.1 mev/GPa, in contrast to the predication of the crystal field theory. It may be due to the strong interaction between the excited state of Eu ions and the conduction band of ZnS host.

Photoluminescence of large-sized InAs/GaAs quantum dots under hydrostatic pressure

The photoluminescence of self-assembled InAs/GaAs quantum dots, which are 7.3nm in height and 78nm in base size, was investigated at 15K under hydrostatic pressures up to 9GPa. The emissions from both the ground and the first excited states in large InAs dots were observed. The pressure coefficients of the two emissions are 69 and 72 meV/GPa respectively, which are lower than those of small InAs/GaAs dots. The analysis based on a nonlinear elasticity theory reveals that the small pressure coefficients mainly result from the changes of the misfit strain and the elastic constants with pressure. The pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.

Investigation of phtoluminesecence under hydrostatic pressure in different sized ZnS : Mn nanoparticles

The PL spectra for the 10, 4. 5, 3. 5, 3, 1 nm sized ZnS:Mn2+ nanoparticles and corresponding bulk material under different pressures were investigated. The orange emission band originated from the T-4(1)-(6)A(1) transition of Mn2+ ions showed obvious red shift with the increasing of pressures. The pressure coefficients of Mn-related emissions measured from bulk, 10, 4. 5, 3.5 and 3 nm samples are -29.4 +/- 0.3, -30.1 +/- 0.3, -33.3 +/- 0.6, -34.6 +/- 0.8 and -39 +/- 1 meV/GPa, respectively. The absolute value of the pressure coefficient increases with the decrease of the size of particles. The size dependence of crystal field strength Dq and Racah parameter B accounts for the size behavior of the Mn-related emission in ZnS:Mn nanoparticles. The pressure behavior of Mn-related emission in the 1 nm sized sample is somewhat different from that of other nanoparticles. It may be due to smaller size of 1 nm sample and the special surface condition since ZnS nanoparticles are formed in the cavities of ziolite-Y for the 1 nm sample.