409 resultados para Pits
Resumo:
In this paper, an interactive planning and scheduling framework are proposed for optimising operations from pits to crushers in ore mining industry. Series of theoretical and practical operations research techniques are investigated to improve the overall efficiency of mining systems due to the facts that mining managers need to tackle optimisation problems within different horizons and with different levels of detail. Under this framework, mine design planning,mine production sequencing and mine transportation scheduling models are integrated and interacted within a whole optimisation system. The proposed integrated framework could be used by mining industry for reducing equipment costs, improving the production efficiency and maximising the net present value.
Resumo:
In mediating endocytosis of extracellular macromolecules; the major mechanism in which cells ingest nutrients, degrade hormones and maintain the protein and lipid compositions of their organelle membrane, the cell surface receptors encounter 'coated pits', migrate continuously from one organelle to another, deliver the 'cargo' and often recycle back to the cell surface. This article is an attempt to give an account of the recent advances in our understanding of the molecular events involved in the 'round trip itinerary' of cell surface receptors.
Resumo:
Mass balance between metal and electrolytic solution, separated by a moving interface, in stable pit growth results in a set of governing equations which are solved for concentration field and interface position (pit boundary evolution). The interface experiences a jump discontinuity in metal concentration. The extended finite-element model (XFEM) handles this jump discontinuity by using discontinuous-derivative enrichment formulation, eliminating the requirement of using front conforming mesh and re-meshing after each time step as in the conventional finite-element method. However, prior interface location is required so as to solve the governing equations for concentration field for which a numerical technique, the level set method, is used for tracking the interface explicitly and updating it over time. The level set method is chosen as it is independent of shape and location of the interface. Thus, a combined XFEM and level set method is developed in this paper. Numerical analysis for pitting corrosion of stainless steel 304 is presented. The above proposed model is validated by comparing the numerical results with experimental results, exact solutions and some other approximate solutions. An empirical model for pitting potential is also derived based on the finite-element results. Studies show that pitting profile depends on factors such as ion concentration, solution pH and temperature to a large extent. Studying the individual and combined effects of these factors on pitting potential is worth knowing, as pitting potential directly influences corrosion rate.
Resumo:
We proposed a novel method to realize the readout of super-resolution pits by using a super-resolution reflective film to replace the reflective layer of the conventional ROM. At the same time, by using Sb as the super-resolution reflective layer and SiN as a dielectric layer, the super-resolution pits with diameters of 380 nm were read out by a setup whose laser wavelength is 632.8 nm and numerical aperture is 0.40. In addition, the influence of the Sb thin film thickness on the readout signal was investigated, the results showed that the optimum Sb thin film thickness is 28 to 30 nm, and the maximum CNR is 38 to 40 dB. (C) 2002 Society of Photo-Optical Instrumentation Engineers.
Resumo:
This is the report on Habitats Directive, the Review of Consents Stage 1 and 2 by the Environment Agency of the Rixton Clay Pits cSAC. The Habitats Directive has the main aim to promote the maintenance of biodiversity by defining a common framework for the conservation of wild plants and animals and habitats of community interest. The Directive establishes a European ecological network known as "Natura 2000". The network comprises Special Areas of Conservation (SAC) and Special Protection Areas (SPA). In the section on Stage 1 or Screening Process of the Habitat Directive, it is identified the likely impacts upon the Rixton Clay Pits cSAC of a project, plan or activities, either alone or in combination with other projects, plans or activities, and considers whether these impacts are likely to be significant. In the section on Stage 2 or Appropiate Assessment of the Habitat Directive, it is considered the impact on the integrity of the Rixton Clay Pits cSAC of the projects, plans or activities, either alone or in combination with other projects, plans or activities, with respect to the site’s structure and function and its conservation objectives. Additionally, where these are adverse impacts, an assessment of the potential mitigation of those impacts. The criteria used in this report to identify relevant projects, plans or activities and their impacts are water quality discharge consents, waste management licences, abstraction licences, Integration Pollution Control (IPC) and Integrated Pollution Prevention Control (IPPC) permits. Proformas, hydrogeological and GIS maps are included in the review.
Resumo:
A GaN film with a thickness of 250 mu m was grown on a GaN/sapphire template in a vertical hydride vapor phase epitaxy (HVPE) reactor. The full-width at half-maximum (FWHM) values of the film were 141 and 498 arcsec for the (0 0 2) and (1 0 2) reflections, respectively. A sharp band-edge emission with a FWHM of 20 meV at 50 K was observed, which corresponded to good crystalline quality of the film. Some almost circular-shaped hillocks located in the spiral growth center were found on the film surface with dimensions of 100 mu m, whose origin was related to screw dislocations and micropipes. Meanwhile, large hexagonal pits also appeared on the film surface, which had six triangular {1 0 (1) over bar 1} facets. The strong emission in the pits was dominated by an impurity-related emission at 377 nm, which could have been a high-concentration oxygen impurity. (c) 2008 Elsevier Ltd. All rights reserved.
Resumo:
The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.