Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV

The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells

(1 1 (2) over bar 0) GaN/InGaN multiple quantum wells (MQWs) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. The excitation-intensity-dependent photoluminescence (PL) spectrum of these samples was measured, and no peak shift was observed. This phenomenon was attributed to the absence of piezoelectric field (PEF) along the growth orientation of the (1 1 (2) over bar 0) face MQWs. Our experimental results showed that PEF was the main reason causing peak blueshift in excitation-intensity-dependent PL spectrum of (0 0 0 1) InGaN/GaN NIQWs. It was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid PEF and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (C) 2002 Elsevier Science B.V. All rights reserved.

VUV-UV photoluminescence spectra of strontium orthophosphate doped with rare earth ions

The measurements of VUV-UV photoluminescence emission (PL) and photoluminescence excitation (PLE) spectra of rare earth ions activated strontium orthophosphate [Sr-3(PO4)(2):RE, RE = Ce, Sm, Eu, Tb] are performed. Whenever the samples are excited by VUV or UV light, the typical emission of Ce-3+,Ce- Sm3+, Eu3+, Eu2+ and Tb3+ ions can be observed in PL spectra, respectively. The charge transfer bands (CTBs) of Sm3+ and Eu3+ are found, respectively, peaking at 206 and 230nm. The absorption bands peaking in the region of 150-160 nm are assigned to the host lattice sensitization bands, i.e., the band-to-band transitions of PO43- grouping in Sr-3(PO4)(2). It is speculated that the first f-d transitions of Sm3+ (Eu3+), and the CTB of Tb3+ are, respectively, located around 165 (14 3) and 167 urn by means of VUV-UV PLE spectra and relational empirical formula, these f-d transitions or CT bands are included in the bands with the maxima at 150-160 nm, respectively. The valence change of europium from trivalent to divalent in strontium orthophosphate prepared in air is observe by VUV-UV PL and PLE spectra.

Espectroscopias de fotoluminescência, excitação e fotoacústica de amostras MgGa2O4: Ni2+ e GaNbO4-GaNb11O29-Ga2O3: Cr3+

Esta tese apresenta as espectroscopias de fotoluminescência, excitação e fotoacústica de amostras MgGa2O4 dopadas com 0,1%, 0,5% e 1,0% de Ni2+, obtidas pelo método de estado sólido e duas amostras distintas GaNbO4-GaNb11O29-Ga2O3 dopadas com 1,0% de Cr3+, uma sintetizada por reação de estado sólido e a outra pelo método de acetato. As amostras foram identificadas por Difração de Raios X e os dados foram refinados pelo método de Rietveld. A morfologia das amostras foi observada por Microscopia Eletrônica de Varredura. Os espectros ópticos das amostras apresentaram bandas de absorção e emissão do visível ao infravermelho próximo. As transições de energia foram analisadas com base na teoria de campo cristalino e os parâmetros de energia foram obtidos a partir de espectros de absorção e das matrizes de Tanabe-Sugano.

Caracterização óptica e estrutural de materiais isolantes dopados com metais de transição do grupo do ferro

O objetivo deste trabalho foi a investigação das propriedades ópticas e estruturais de materiais isolantes contendo metais de transição do grupo do ferro como impurezas substitucionais. As técnicas usadas para o estudo de amostras MgGa2O4, MgGa2O4 + B- Ga2O3 e ZnGa2O4 dopadas com Cr3+e Fe3+ foram: fotoluminescência, excitação, difração de raios-X, espalhamento de nêutrons, método de Rietveld para o refinamento da estrutura e espectroscopia fotoacústica. Estas técnicas permitem a determinação da coordenação do sítio impureza, a atribuição das transições de energia, o cálculo dos parâmetros de energia e a determinação de propriedades cristalográficas. As amostras apresentam largas bandas de energia nas regiões do visível e do infravermelho. Estas transições indicam a relevância deste estudo pelo interesse tecnológico na obtenção de novos materais com bandas sintonizáveis. No primeiro capítulo apresentamos uma introdução à teoria de campo cristalino. No segundo capítulo apresentamos medidas de fotoluminescência e excitação do MgGa2O4 dopado com 0,1, 0,5, 1,0 e 5,0 % de Cr3+ a 77 K e temperatura ambiente. No terceiro capítulo usamos fotoluminescência, excitação, espalhamento de nêutrons, difração de raios X, fotoacústica e método de refino de Rietveld para analisar o sistema MgGa2O4 + B-Ga2O3 contendo 0,1, 0,5, 1,0 e 5,0 % de Cr3+. No quarto capítulo mostramos resultados de fotoacústica para o ZnGa2O4 dopado com 5% e 10% de Fe3+.

Propriedades luminescentes do SrGa2O4 dopado com íons de Ni2+

O objetivo deste trabalho é a síntese e investigação estrutural e óptica de amostras SrGa2O4 dopados com 1% de íons Ni2+. Estas amostras foram sintetizados por reação do estado sólido convencional, utilizando como materiais de partida de alta pureza Ga2O3, SrCO3 e NiO em quantidades estequiométricas. As amostras foram caracterizadas estruturalmente pelo método de difração de raios - X( XRD ) e as medições de difração mostraram que as amostras têm uma única fase monoclínica. Os padrões de XRD também foram refinados pelo método de Rietveld, que permitiu a determinação dos parâmetros de célula unitária. A Caracterização óptica das amostras puras e dopadas SrGa2O4 foram realizadas as medições a partir de fotoluminescência, de excitação e de absorção fotoacústica, à temperatura ambiente. Os espectros de emissão mostraram três bandas de emissão localizadas em 557 nm, 661 nm e 844 nm e foram identificadas essas bandas, respectivamente, com as seguintes transições eletrônicas :1T2 (1D) → 3A2 (3F), 3T1 (3F)→ 3A2 (3F) e 1T2 (1D) → 3T2 (3F). Os espectros de excitação mostraram seis bandas de absorção associadas às transições electrônicas do nível 3A2 (3F) para o 3T1 (3P) , T1 (3P), 1A1 (1G), 1T2 (1D), 3T1 (3F), 1E (1D) e 1T2, 1E (1G). Medidas de absorção fotoacústica também foram realizados com o fim de verificar as transições ópticas observadas nos espectros de excitação e de identificar novas bandas de absorção óptica. Os resultados demonstraram que os íons de Ni2+ ocupam dois locais octaédricos diferentes na amostra SrGa2O4 dopado. A partir das transições ópticas observadas nos espectros de excitação e fotoacústica, determinou-se o parâmetro de cristal de campo, dq, e parâmetros Racah, B e C. A proporção Dq / B ≈ 1.2 para ambos os locais são típicos para Ni2+ íons inseridos em redes de óxido e em coordenação octaédrica.

Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H films.

Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

CdSe nanoclusters overcoated with CdS shell were prepared with macapoacetic acid as stabilizer. The optical properties of CdSe nanoclusters and the influence of CdS shell on the electronic structures of CdSe cores were studied by optical absorption, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Based on PL and PLE results and the theoretical calculation on fine structure of bandedge exciton, a model of formation of excimer within the small clusters was proposed to explain the large Stokes shift of luminescence from absorption edge observed in PL results. (C) 2000 Elsevier Science B.V. All rights reserved.

Exciton states and optical spectra in CdSe nanocrystallite quantum dots

By using the hole effective-mass Hamiltonian for semiconductors with the wurtzite structure, we have studied the exciton states and optical spectra in CdSe nanocrystallite quantum dots. The intrinsic asymmetry of the hexagonal lattice structure and the effect of spin-orbital coupling (SOC) on the hole states are investigated. It is found that the strong SOC limit is a good approximation for hole states. The selection rules and oscillator strengths for optical transitions between the conduction- and valence-band states are obtained. The Coulomb interaction of exciton states is also taken into account. In order to identify the exciton states, we use the approximation of eliminating the coupling of Gamma(6)(X, Y) with Gamma(1)(Z) states. The results are found to account for most of the important features of the experimental photoluminescence excitation spectra of Norris ct nl. However, if the interaction between Gamma(6)(X, Y) and Gamma(1)(Z) states is ignored, the optically passive P-x state cannot become the ground hole state for small CdSe quantum dots of radius less than 30 Angstrom. It is suggested that the intrinsic asymmetry of the hexagonal lattice structure and the coupling of Gamma(6)(X,Y) with Gamma(1)(Z) states are important for understanding the "dark exciton" effect.

Structure, fluorescence and stability of CdS nanoparticles prepared in air

CdS nanoparticies were prepared in air and their stability by air annealing was studied. A small change in crystal structure and particle size was observed by air annealing, but a rapid reduction in fluorescence was found. Through investigation, it is revealed that it is the surface change or reconstruction rather than the variation of the size or structure that decreases the fluorescence. The emission of the particles consists with two peaks which are dependent on the excitation energy. The two peaks are considered to be arisen from "two" different sizes of nanoparticles and may be explained in terms of selectively excited photoluminescence. Finally we discuss why the discrete state of nanoparticles are able to be resolved in the photoluminescence excitation spectrum, but could not be differentiated in the absorption spectrum.

Formation, structure and fluorescence of CdS clusters in a mesoporous zeolite

CdS clusters are formed in the pores of a mesoporous zeolite in which the size of the clusters may be adjusted. The size of the clusters increases as the CdS loading is increased. X-ray diffraction investigation shows that the lattice constants of the clusters contract upon increasing size. This contraction is attributed to an increase of the static pressure exercised by the zeolite framework as the clusters grow bigger. Both the excitonic and trapped emission bands are detected and become more intensive upon decreasing size. Three absorption bands appear in the photoluminescence excitation (PLE) spectra and they shift to the blue as cluster size decreases. Based on the effective-mass approximation, the three bands are assigned to the 1S-1S, 1S-1P and 1S-1D transitions, respectively. The size-dependence of the PLE spectra can also be explained. (C) 1997 Elsevier Science Ltd.

BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS

N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways. The value obtained (0.24-0.25 eV) has been verified by photoluminescence and photoluminescence excitation on a 90 angstrom thick GaAs well in GaInP grown under the same conditions.

Characterization of CdSe and CdSe/CdS core/shell nanoclusters synthesized in aqueous solution

CdSe nanoclusters overcoated with CdS shell were prepared with macapoacetic acid as stabilizer. The optical properties of CdSe nanoclusters and the influence of CdS shell on the electronic structures of CdSe cores were studied by optical absorption, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Based on PL and PLE results and the theoretical calculation on fine structure of bandedge exciton, a model of formation of excimer within the small clusters was proposed to explain the large Stokes shift of luminescence from absorption edge observed in PL results. (C) 2000 Elsevier Science B.V. All rights reserved.