BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS
| Data(s) |
1993
|
|---|---|
| Resumo |
N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways. The value obtained (0.24-0.25 eV) has been verified by photoluminescence and photoluminescence excitation on a 90 angstrom thick GaAs well in GaInP grown under the same conditions. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
FENG SL; KRYNICKI J; DONCHEV V; BOURGOIN JC; DIFORTEPOISSON M; BRYLINSKI C; DELAGE S; BLANCK H; ALAYA S.BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1993,8(12):2092-2096 |
| Palavras-Chave | #半导体物理 #CONDUCTION-BAND #PHASE EPITAXY #VALENCE #VOLTAGE |
| Tipo |
期刊论文 |
