Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film
Data(s) |
2003
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Resumo |
An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H<Er> films. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen CY; Chen WD; Li GH; Song SF; Ding K; Xu ZJ .Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film ,CHINESE PHYSICS,2003,12 (4):438-442 |
Palavras-Chave | #半导体物理 #a-Si domain #erbium #photoluminescence #SI NANOCRYSTALS #LUMINESCENCE #ERBIUM #PHOTOLUMINESCENCE #EXCITATION #OXIDE |
Tipo |
期刊论文 |