Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.

Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Preparation and photoluminescence characteristics of In(OH) 3:xTb3+ obtained by Microwave-Assisted Hydrothermal method

Crystalline terbium-doped indium hydroxide structures were prepared by a rapid and efficient Microwave-Assisted Hydrothermal (MAH) method. Nanostructures were obtained at a low temperature. FE-SEM images confirm that these samples are composed of 3D nanostructures. XRD, optical diffuse reflectance and photoluminescence (PL) measurements were used to characterize the products. Emission spectra of terbium-doped indium hydroxide (In(OH)3:xTb 3+) samples under excitation (350.7 nm) presented broad band emission referent to the indium hydroxide matrix and 5D4 → 7F6, 5D4 → 7F 5, 5D4 → 7F4, and 5D4 → 7F3 terbium transitions at 495, 550, 590 and 627 nm, respectively. Relative intensities of the Tb 3+ emissions increased as the concentration of this ion increased from 0, 1, 2, 4 and 8 mol%, of Tb3+, but the luminescence is drastically quenched for the In(OH)3 matrix. © 2012 Elsevier B.V. All rights reserved.

Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO2 thin films

Titanium dioxide (TiO2) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO2 films were investigated. The refractive index of TiO2 films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO2 film is of anatase phase after annealing at 300 degrees C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. (C) 2012 Elsevier B.V. All rights reserved.

Self-assembled ZnO nanoparticles on ZnO microsheet: ultrafast synthesis and tunable photoluminescence properties

We report on the tunable photoluminescence characteristics of porous ZnO microsheets fabricated within 1-5 min of microwave irradiation in the presence of a capping agent such as citric acid, and mixture of citric acid with polyvinylpyrrolidone (PVP). The UV emission intensity reduces to 60% and visible emission increases tenfold when the molar concentration of citric acid is doubled. Further diminution of the intensity of UV emission (25%) is observed when PVP is mixed with citric acid. The addition of nitrogen donor ligands to the parent precursor leads to a red shift in the visible luminescence. The deep level emission covers the entire visible spectrum and gives an impression of white light emission from these ZnO samples. The detailed luminescence mechanism of our ZnO samples is described with the help of a band diagram constructed by using the theoretical models that describe the formation energy of the defect energy levels within the energy band structure. Oxygen vacancies play the key role in the variation of the green luminescence in the ZnO microsheets. Our research findings provide an insight that it is possible to retain the microstructure and simultaneously introduce defects into ZnO. The growth of the ZnO microsheets may be due to the self assembly of the fine sheets formed during the initial stage of nucleation.

Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films

Temperature-dependent photoluminescence characteristics of non-polar m-plane ZnO and ZnMgO alloy films grown by metal organic chemical vapor deposition have been studied. The enhancement in emission intensity caused by localized excitons in m-plane ZnMgO alloy films was directly observed and it can be further improved after annealing in nitrogen. The concentration of Zn vacancies in the films was increased by alloying with Mg, which was detected by positron annihilation spectroscopy. This result is very important to directly explain why undoped Zn1-xMgxO thin films can show p-type conduction by controlling Mg content, as discussed by Li [Appl. Phys. Lett. 91, 232115 (2007)].

Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well

We have investigated the exciton spin relaxation in a GaInNAs/GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 American Institute of Physics.

Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices

The self-organization growth of In0.32Ga0.68As/GaAs quantum dots (QDs) superlattices is investigated by molecular beam epitaxy. It is found that high growth temperature and low growth rate are favorable for the formation of perfect vertically aligned QDs superlattices. The aspect ratio (height versus diameter) of QD increases from 0.16 to 0.23 with increase number of bi-layer. We propose that this shape change play a significant role to improve the uniformity of QDs superlattices. Features in the variable temperature photoluminescence characteristics indicate the high uniformity of the QDs. Strong infrared absorption in the 8-12 mum was observed. Our results suggest the promising applications of QDs in normal sensitive infrared photodetectors. (C) 2001 Elsevier Science B.V. All rights reserved.

Gd3+ -> Eu2+ energy transfer in BaLiF3 : Eu, Gd

Photoluminescence characteristics and the energy transfer between Gd3+ and Eu2+ in BaLiF3,, matrix have been investigated. A series of concentrations of Gd3+ ion with a fixed Eu2+ concentration doped in BaLiF3 : Gd3+, Eu2+ has been studied. When the doping concentration for Gd3+ was 0.3%,, the system reached the highest energy transfer efficiency. Due to the competitive absorption for the Gd3+ and the Eu2+ ions in BaLiF3 : Gd3+ : Eu2+, when the doping concentration for Gd3+ ion exceeded 0.3 Vo, the continuously increasing concentration of Gd3+ ions caused the competitive absorption ratio for Gd3+ increasing and the emission intensity of Eu2+ decreasing. The energy transfer processes were discussed, while the transfer probability was calculated to be 1.35 X 10(5) s(-1).

Ce3+ -> Eu2+ energy transfer in BaLiF3 phosphor

Photoluminescence characteristics and the energy transfer between Ce3+ and Eu2+ in BaLiF3 host lattice have been investigated. A series of concentrations of Ce3+ ion with a fixed Eu2+ concentration in doubly doped BaLiF3:Ce3+,Eu2+ have been studied. According to the defects forming after Eu2+ and Ce3+ entering the host lattice, cerium ions occupy the positions of nearest neighbors of the europium ions. The energy transfer probability and critical distance are calculated. (C) 1999 Elsevier Science Ltd. All rights reserved.

Luminescence and microstructure of Sr2Mg(BO3)2 doped with Eu

Sr₂Mg(B0₃)₂ doped with Eu was synthesized respectively in air and weak reducing atmosphere (combustion of carbon particle), whose photoluminescence characteristics and structure were also studied at room-temperature. In air, the fluorescent body's color was white for different synthesized temperatures. At room temperature, the sample was excited and showed red typical emission spectrum of Eu³⁺ whose emission apex were sharp near 612 nm and emission spect~m was made up of the charge transformation band (CTB) of Eu^{3 +} and excitation spectrum of 4f→4f high energy level transition, then reached the area of VUV. However, under reducing atmosphere (combustion of carbon particles), the color of the sample yielded was yellow, whose color became deeper with increasing temperature and showed phase transition. Using UV excitation, the luminescence of yellow sample was very weak. In a complicated broad spectrum at visible light area, the red emission spectrum of Eu²⁺ was not observed. Crystal structure and luminescence of the sample were completely different from the results of Diaz and Keszler. Two samples were prepared under oxidation and reducing atmosphere at high temperature, which were different on crystal structure and microstructure. By studying Sr₂Mg(B0₃)₂:Eu³⁺ a series of directional faults or educts were found, because Eu^{3 +} ions substituted for Sr^{2 +} ions. However, microstructure of Sr₂Mg(B0₃ )₂: Eu^{2 +} is more complicated, whose excitation spectrum might be excited by Eu^{2 +}. By XRD patten of the samples, phase transitibn could be found. Twins and clusters that were formed from point defect such as interstitial atom and big angle crystal boundary could be found by TEM.

Substituted naphthoquinones as novel amino acid sensitive reagents for the detection of latent fingermarks on paper surfaces

In this paper, we present our preliminary studies into naphthoquinones as novel reagents for the detection of latent fingermarks on paper. Latent fingermarks deposited on paper substrates were treated with solutions of selected naphthoquinones in ethyl acetate/HFE-7100, with subsequent heating. The selected compounds were 1,4-dihydroxy-2-naphthoic acid, 1,2-naphthoquinone-4-sulfonate, 2-methoxy-1,4-naphthoquinone and 2-methyl-1,4-naphthoquinone. All of the tested compounds yielded purple-brown visible fingermarks, which also exhibited photoluminescence when illuminated with a high intensity filtered light source at 555nm and viewed through red goggles. Indirect heat using an oven at 150 ◦C for 1 h was found to be superior to direct heat with an iron, which while providing faster development lead to increased levels of background colouration. Luminescence spectrophotometry revealed differences in photoluminescence characteristics for fingermarks developed with the different naphthoquinones, with excitation over the range 530–590 nm. Luminescence spectrophotometry of developed lysine, glycine and serine spots on paper was used to confirm that the naphthoquinones were reacting with amino acids in the latent fingermark.

Impact of substrate nitridation on the photoluminescence and photovoltaic characteristics of GaN grown on p-Si (100) by molecular beam epitaxy

This report focuses on the structural and optical properties of the GaN films grown on p-Si (100) substrates along with photovoltaic characteristics of GaN/p-Si heterojunctions fabricated with substrate nitridation and in absence of substrate nitridation. The high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopic studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN epifilms grown with silicon nitride buffer layer when compared with the sample grown without silicon nitride buffer layer. The low temperature PL shows a free excitonic (FX) emission peak at 3.51 eV at the temperature of 5 K with a very narrow line width of 35 meV. Temperature dependent PL spectra follow the Varshni equation well and peak energy blue shifts by similar to 63 meV from 300 to 5 K. Raman data confirms the strain free nature and reasonably good crystallinity of the films. The GaN/p-Si heterojunctions fabricated without substrate nitridation show a superior photovoltaic performance compared to the devices fabricated in presence of substrate nitridation. The discussions have been carried out on the junction properties. Such single junction devices exhibit a promising fill factor and conversion efficiency of 23.36 and 0.12 %, respectively, under concentrated AM1.5 illumination.