Large negative magnetoresistance and metal-insulator transition observed in MnO/C composite coatings grown on ceramic alumina by metalorganic chemical vapor deposition

MnO/C composite coatings were grown by the metalorganic chemical vapor deposition process on ceramic alumina in argon ambient. Characterization by various techniques confirms that these coatings are homogeneous composites comprising nanometer-sized MnO particles embedded in a matrix of nanometer-sized graphite. Components of the MnO/C composite coating crystalline disordered, but are electrically quite conductive. Resistance vs. temperature measurements show that coating resistance increases exponentially from a few hundred ohms at room temperature to a few megaohms at 30 K. Logarithmic plots of reduced activation energy vs. temperature show that the coating material undergoes a metal-insulator transition. The reduced activation energy exponent for the film under zero magnetic field was 2.1, which is unusually high, implying that conduction is suppressed at much faster rate than the Mott or the Efros-Shklovskii hopping mechanism. Magnetoconductance us. magnetic field plots obtained at various temperatures show a high magnetoconductance (similar to 28.8%) at 100 K, which is unusually large for a disordered system, wherein magnetoresistance is attributed typically to weak localization. A plausible explanation for the unusual behavior observed in the carbonaceous disordered composite material is proposed. (C) 2010 Elsevier Ltd. All rights reserved.

Magnetoresistance of FexNi80-xCr20 (50

The authors have measured longitudinal and transverse magnetoresistance (MR) of crystalline pseudo-binary alloys FexNi80-xCr20 (50magnetoresistances for gamma -phase and alpha -phase Fe alloys when they lie close to the critical composition. The experiments were conducted at 4.2 K with magnetic fields up to 7 T. The authors observed that all the alloys show negative magnetoresistance at 4.2 K in fields up to 7 T. However, for the gamma -phase alloys the typical maximum MR ( Delta rho / rho ) is about 1%, while for the alpha -phase alloy it is 10%. In the gamma -phase alloys there is a small but finite anisotropy of MR in the phases with long-range magnetic order which gradually vanishes near the critical region (x=xc approximately=59-63) when it becomes a spin glass. In the range x approximately=xc, Delta rho / rho varies as Mn (M=magnetization) with n approximately=2.

Ferromagnetic La0.6Pb0.4MnO3 thin films with giant magnetoresistance at 300 K

Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.

Magnetoresistance in a nominally undoped InGaN thin film

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

An investigation of low-field magnetoresistance in the double perovskites Sr2Fe1-xZnxMoO6, x=0, 0.05, 0.15 and 0.25

The electrical, magnetic and transport properties of Zn doped polycrystalline samples of Sr2Fe1-xZnxMoO6 ( x = 0, 0.05, 0.15 and 0.25) with the double perovskite structure have been investigated. The subtle replacement of Fe3+ ions by Zn2+ ions facilitates the formation of a more ordered structure, while further substitution leads to disordered structure because of the presence of a striped phase. Analysis of the x-ray powder diffraction patterns based on Rietveld analysis indicates that the replacement of Fe3+ by Zn2+ ions favours the formation of Mo6+ ions. The spin-glass behaviour can be explained on the basis of the competition between the antiferromagnetic superexchange and the ferromagnetic double-exchange interaction. The low-field magnetoresistance was moderately enhanced at x = 0.05, and its origin was found to be the competition between the decrease of the concentration of the itinerant electrons and the weaker antiferromagnetic superexchange in the antiphase boundaries. An almost linear negative magnetoresistance in moderate field has been observed for x = 0.25. A possible double-exchange mechanism is proposed for elucidating the observations; it also suggests a coexistence of (Fe3+, Mo5+) and (Zn2+, Mo6+) valence pairs.

Study of colossal magnetoresistance and pressure effects in La2/3Ca1/3MnO2 thin films /

The main purpose of this thesis is to study properties of La2/3Cai/3Mn03, both polycrystalline ceramics and thin films. This material has striking related electrical and magnetic properties. Thin films show colossal negative magnetoresistance (CMR) near transition from an insulating to a metallic state accompanied closely by transition from a paramagnetic to a ferromagnetic state. The double exchange mechanism (DE) and the Jahn-Teller deformations play an important role in CMR effect. Applied pressure has a very similar effect as does an applied magnetic field, except, at low temperatures (Tnegative magnetoresistance Ap/p(H) of over 400% at 245°C and 4200% at 90 K.

Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Magnetoresistance in a High Mobility Two-Dimensional Electron System as a Function of Sample Geometry

In a high mobility two-dimensional electron gas (2DEG) realized in a GaAs/Al0.3Ga0.7As quantum well we observe changes in the Shubnikov-de Haas oscillations (SdHO) and in the Hall resistance for different sample geometries. We observe for each sample geometry a strong negative magnetoresistance around zero magnetic field which consists of a peak around zero magnetic field and of a huge magnetoresistance at larger fields. The peak around zero magnetic field is left unchanged for different geometries.

Low temperature electrical transport properties of carbon matrix containing iron nanoparticles

We present a comparative study of the low temperature electrical transport properties of the carbon matrix containing iron nanoparticles and the films. The conductivity of the nanoparticles located just below the metal-insulator transition exhibits metallic behavior with a logarithmic temperature dependence over a large temperature interval. The zero-field conductivity and the negative magnetoresistance, showing a characteristic upturn at liquid helium temperature, are consistently explained by incorporating the Kondo relation and the two dimensional electron-electron interaction. The films, in contrast, exhibit a crossover of the conductivity from power-law dependence at high temperatures to an activated hopping law dependence in the low temperature region. The transition is attributed to changes in the energy dependence of the density of states near the Fermi level. The observed magnetoresistance is discussed in terms of quantum interference effect on a three-dimensional variable range hopping mechanism.

Magnetic Properties of Iron Particles Embedded in Multiwall Carbon Nanotubes

Iron nanoparticles are embedded in multiwall carbon nanotubes by the chemical vapor deposition, where benzene and ferrocene are taken as precursor materials. Varying quantity of iron particles are embedded in these tubes by taking different amount of ferrocene. These particles exhibit a magnetic moment up to 98 emu/g and an enhanced coercivity in the range of 500-2000 Oe. Negative magnetoresistance similar to 10% is observed in the presence of magnetic field up to 11 T applied at various temperatures in the range of 1.3 K-300 K. It is argued that the enhanced coercivity is due to the shape anisotropy. The negative magnetoresistance is believed to be due to the weak localization and spin dependent scattering of electrons by the ferromagnetic particles. In addition we also observe a dependence of the magnetoresistance on the direction of applied field and this is correlated with the shape anisotropy of the Fe particles.

Magneto-transport and optical properties of diluted magnetic semiconductor Ga1-xMnxSb

We have studied magneto-transport and optical properties of Ga1-xMnxSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10K which could arise from Ga1-xMnxSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein's model.

Charge transport properties of water dispersible multiwall carbon nanotube-polyaniline composites

The transmission electron microscopy images of in situ prepared multiwall carbon nanotubes (MWNTs)and polyaniline (PANI) composites show that nanotubes are well dispersed in aqueous medium, and the nanofibers of PANI facilitate intertube transport. Although low temperature transport indicates variable range hopping (VRH) mechanism, the dc and ac conductivity become temperature independent as the MWNT content increases. The onset frequency for the increase in conductivity is observed to be strongly dependent on the MWNT weight percent, and the ac conductivity can be scaled onto a master curve. The negative magnetoresistance is attributed to the forward interference scattering mechanism in VRH transport. (C) 2010 American.

Magnetization and magnetoresistive response of LiMn2O4 near the charge ordering transition

We report magnetization and magnetoresistance studies of the geometrically frustrated spinel compound LiMn2O4 near its charge ordering temperature. The effect of a 7 T magnetic field is to very slightly shift the transition in the resistivity to lower temperatures resulting in large negative magnetoresistance with significant hysteresis. This hysteresis is not reflected in the magnetization. These observations are compared with what is found in the colossal magnetoresistance and charge ordering perovskite manganese oxides. The manner in which geometric frustration influences the coupling of charge and spin degrees of freedom is examined.

Preparation, Structural, and Electrical Studies of Polyaniline/ZnFe2O4 Nanocomposites

Polyaniline/ZnFe2O4 nanocomposites were synthesized by a simple and inexpensive one-step in situ polymerization method in the presence of ZnFe2O4 nanoparticles. The structural, morphological, and electrical properties of the samples were characterized by wide angle X-ray diffraction (WAXD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), and thermogravimetric analysis (TGA). WAXD and SEM revealed the formation of polyaniline/ZnFe2O4 nanocomposites. Infrared spectroscopy indicated that there was some interaction between the ZnFe2O4 nanoparticles and polyaniline. The dc electrical conductivity measurements were carried in the temperature range of 80 to 300 K. With increase in the doping concentration of ZnFe2O4, the conductivity of the nanocomposites found to be decreasing from 5.15 to 0.92 Scm(-1) and the temperature dependent resistivity follows ln rho(T) similar to T-1/2 behavior. The nanocomposites (80 wt % of ZnFe2O4) show a more negative magnetoresistance compared with that of pure polyaniline (PANI). These results suggest that the interaction between the polymer matrix PANI and zinc nanoparticles take place in these nanocomposites. (C) 2011 Wiley Periodicals, Inc. J Appl Polym Sci 120: 2856-2862, 2011

Magnetic field-induced metal-insulator transitions in graphite and diluted magnetic semiconductors - Discussion

Two topical subjects related with the effect of magnetic field on electrical conduction and the metal-insulator transition are discussed. The first topic is an electronic phase transition in graphite, which is interpreted as a manifestation of a nestingtype instability inherent to a one-dimensional narrow Landau sub-band. The second topic is spin-dependent tranport in III-V based diluted magnetic semiconductors; in particular, a large negative magnetoresistance observed in the vicinity of metal-nonmetal transition.