Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet


Autoria(s): Bibes, Manuel; Martínez Benjamin, Joan Josep; Fontcuberta i Griñó, Josep; Trtik, V.; Benitez, F.; Ferrater Martorell, Cèsar; Sánchez Barrera, Florencio; Varela Fernández, Manuel, 1956-
Contribuinte(s)

Universitat de Barcelona

Data(s)

04/05/2010

Resumo

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

Identificador

http://hdl.handle.net/2445/10640

Idioma(s)

eng

Publicador

The American Physical Society

Direitos

(c) The American Physical Society, 1999

info:eu-repo/semantics/openAccess

Palavras-Chave #Materials #Propietats magnètiques #Magnetic properties and materials #Electronic transport in condensed matter #Electronic structure and electrical properties of surfaces
Tipo

info:eu-repo/semantics/article