Magnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnet
Data(s) |
29/12/2009
29/12/2009
1999
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Resumo |
The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces. |
Formato |
4 p. application/pdf |
Identificador |
0163-1829 http://hdl.handle.net/2445/10640 150617 |
Idioma(s) |
eng |
Publicador |
The American Physical Society |
Relação |
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.60.9579 Physical Review B, 1999, vol. 60, num. 13, p. 9579-9582 |
Direitos |
(c) The American Physical Society, 1999 info:eu-repo/semantics/openAccess |
Palavras-Chave | #Materials #Propietats magnètiques #Magnetic properties and materials #Electronic transport in condensed matter #Electronic structure and electrical properties of surfaces |
Tipo |
info:eu-repo/semantics/article |