SIGNATURES OF NEW PHYSICS FROM HBT CORRELATIONS IN UHECRS

Quantum fields written on noncommutative spacetime (Groenewold-Moyal plane) obey twisted commutation relations. In this paper we show that these twisted commutation relations result in Hanbury-Brown Twiss (HBT) correlations that are distinct from that for ordinary bosonic or fermionic fields, and hence can provide useful information about underlying noncommutative nature of spacetime. The deviation from usual bosonic/fermionic statistics becomes pronounced at high energies, suggesting that a natural place is to look at Ultra High Energy Cosmic Rays (UHECRs). Since the HBT correlations are sensitive only to the statistics of the particles, observations done with UHECRs are capable of providing unambiguous signatures of noncommutativity, with-out any detailed knowledge of the mechanism and source of origin of UHECRs.

气源分子束外延生长SiGe/Si材料的性质及HBT器件应用

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

SiGe/Si 射频功率HBT 器件的研制

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter-base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer. (C) 2005 Elsevier Ltd. All rights reserved.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

Ge组分对SiGe HBT直流特性的影响

制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT).实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高.Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2.6倍.

GSMBE生长的用于研制HBT的SiGe/Si异质结材料

用GSMBE法生长了Si/SiGe/Si异质结构材料。采用双台面结构制造了SiGe/Si NPN异质结晶体管。在发射结条宽为4μm，面积为4μm×18μm的条件下，其共发射极直流放大倍数为75，截止频率为20GHz。给出了结构设计、材料生长和器件制作工艺。

Efect of Nostoc muscorum Ag. on germination in vitro of Bremia lactucae sporangia in Lactuca sativa L. Regel

p.1-8

Soybean - Corn rotation : efect of the stubble mineralization on the nitrates production and corn yield

p.53-58

Soybean - Corn rotation : efect of the stubble mineralization on the nitrates production and corn yield

p.53-58

Efect of Nostoc muscorum Ag. on germination in vitro of Bremia lactucae sporangia in Lactuca sativa L. Regel

p.1-8