气源分子束外延生长SiGe/Si材料的性质及HBT器件应用
| Contribuinte(s) |
曾一平 |
|---|---|
| Data(s) |
2000
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:35:30Z (GMT). No. of bitstreams: 1 disk/eh2000/lyx.pdf: 866359 bytes, checksum: 209b3efb6e07ebbb291760e3fb1c6a77 (MD5) Previous issue date: 2000 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
林燕霞.气源分子束外延生长SiGe/Si材料的性质及HBT器件应用.[硕士].北京.中国科学院半导体研究所.2000 |
| Palavras-Chave | #半导体材料 |
| Tipo |
学位论文 |
