976 resultados para CHARGE STORAGE MECHANISM


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Magnesium (Mg) battery is considered as a promising candidate for the next generation battery technology that could potentially replace the current lithium (Li)-ion batteries due to the following factors. Magnesium possesses a higher volumetric capacity than commercialized Li-ion battery anode materials. Additionally, the low cost and high abundance of Mg compared to Li makes Mg batteries even more attractive. Moreover, unlike metallic Li anodes which have a tendency to develop a dendritic structure on the surface upon the cycling of the battery, Mg metal is known to be free from such a hazardous phenomenon. Due to these merits of Mg as an anode, the topic of rechargea¬ble Mg batteries has attracted considerable attention among researchers in the last few decades. However, the aforementioned advantages of Mg batteries have not been fully utilized due to the serious kinetic limitation of Mg2+ diffusion process in many hosting compounds which is believed to be due to a strong electrostatic interaction between divalent Mg2+ ions and hosting matrix. This serious kinetic hindrance is directly related to the lack of cathode materials for Mg battery that provide comparable electrochemical performances to that of Li-based system. Manganese oxide (MnO2) is one of the most well studied electrode materials due to its excellent electrochemical properties, including high Li+ ion capacity and relatively high operating voltage (i.e., ~ 4 V vs. Li/Li+ for LiMn2O4 and ~ 3.2 V vs. Mg/Mg2+). However, unlike the good electrochemical properties of MnO2 realized in Li-based systems, rather poor electrochemical performances have been reported in Mg based systems, particularly with low capacity and poor cycling performances. While the origin of the observed poor performances is believed to be due to the aforementioned strong ionic interaction between the Mg2+ ions and MnO2 lattice resulting in a limited diffusion of Mg2+ ions in MnO2, very little has been explored regarding the charge storage mechanism of MnO2 with divalent Mg2+ ions. This dissertation investigates the charge storage mechanism of MnO2, focusing on the insertion behaviors of divalent Mg2+ ions and exploring the origins of the limited Mg2+ insertion behavior in MnO2. It is found that the limited Mg2+ capacity in MnO2 can be significantly improved by introducing water molecules in the Mg electrolyte system, where the water molecules effectively mitigated the kinetic hindrance of Mg2+ insertion process. The combination of nanostructured MnO2 electrode and water effect provides a synergic effect demonstrating further enhanced Mg2+ insertion capability. Furthermore, it is demonstrated in this study that pre-cycling MnO2 electrodes in water-containing electrolyte activates MnO2 electrode, after which improved Mg2+ capacity is maintained in dry Mg electrolyte. Based on a series of XPS analysis, a conversion mechanism is proposed where magnesiated MnO2 undergoes a conversion reaction to Mg(OH)2 and MnOx and Mn(OH)y species in the presence of water molecules. This conversion process is believed to be the driving force that generates the improved Mg2+ capacity in MnO2 along with the water molecule’s charge screening effect. Finally, it is discussed that upon a consecutive cycling of MnO2 in the water-containing Mg electrolyte, structural water is generated within the MnO2 lattice, which is thought to be the origin of the observed activation phenomenon. The results provided in this dissertation highlight that the divalency of Mg2+ ions result in very different electrochemical behaviors than those of the well-studied monovalent Li+ ions towards MnO2.

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The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.

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We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

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Nanosized cerium and nitrogen co-doped TiO2 (Ce-TiO2-xNx) was synthesized by sol gel method and characterized by powder X-ray diffraction (PXRD), X-ray photoelectron spectroscopy (XPS), FESEM, Fourier transform infrared, N-2 adsorption and desorption methods, photoluminescence and ultraviolet-visible (UV-vis) DRS techniques. PXRD analysis shows the dopant decreases the crystallite sizes and slows the crystallization of the titania matrix. XPS confirm the existence of cerium ion in +3 or +4 state, and nitrogen in -3 state in Ce-TiO2-xNx. The modified surface of TiO2 provides highly active sites for the dyes at the periphery of the Ce-O-Ti interface and also inhibits Ce particles from sintering. UV-visible DRS studies show that the metal-metal charge transfer (MMCT) of Ti/Ce assembly (Ti4+/Ce3+ -> Ti3+/Ce4+) is responsible for the visible light photocatalytic activity. Photoluminescence was used to determine the effect of cerium ion on the electron-hole pair separation between the two interfaces Ce-TiO2-xNx and Ce2O3. This separation increases with the increase of cerium and nitrogen ion concentrations of doped samples. The degradation kinetics of methylene blue and methyl violet dyes in the presence of sol gel TiO2, Ce-TiO2-xNx and commercial Degussa P25 was determined. The higher visible light activity of Ce-TiO2-xNx was due to the participation of MMCT and interfacial charge transfer mechanism.

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In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under +/- 8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

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The charge transport mechanism of oligo(p-phenylene ethynylene)s with lengths ranging from 0.98 to 5.11 nm was investigated using modified scanning tunneling microscopy break junction and conducting probe atomic force microscopy methods. The methods were based on observing the length dependence of molecular resistance at single molecule level and the current-voltage characteristics in a wide length distribution. An intrinsic transition from tunneling to hopping charge transport mechanism was observed near 2.75 nm. A new transitional zone was observed in the long length molecular wires compared to short ones. This was not a simple transition between direct tunneling and field emission, which may provide new insights into transport mechanism investigations. Theoretical calculations provided an essential explanation for these phenomena in terms of molecular electronic structures.

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Perylene bisimides (PBIs) are n-type semiconducting and photogenerating materials widely used in a variety of optoelectronic devices. Particularly interesting are PBIs that are simultaneously water-soluble and liquid-crystalline (PBI-W+LC) and, thus, attractive for the development of high-performing easily processable applications in biology and “green” organic electronics. In this work, singular temperatures connected to charge transport mechanism transitions in a PBI-W+LC derivative are determined with high accuracy by means of temperature-dependent photocurrent studies. These singular temperatures include not only the ones observed at 60 and 110 °C, corresponding to phase transition temperatures from crystalline to liquid-crystalline (LC) and from LC to the isotropic phase, respectively, as confirmed by differential scanning calorimetry (DSC), but also a transition at 45 °C, not observed by DSC. By analyzing the photocurrent dependence simultaneously on temperature and on light intensity, this transition is interpreted as a change from monomolecular to bimolecular recombination. These results might be useful for other semiconducting photogenerating materials, not necessarily PBIs or even organic semiconductors, which also show transport behavior changes at singular temperatures not connected with structural or phase transitions.

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Unique bimodal distributions of single crystal epitaxially grown In2O3 nanodots on silicon are shown to have excellent IR transparency greater than 87% at IR wavelengths up to 4 μm without sacrificing transparency in the visible region. These broadband antireflective nanodot dispersions are grown using a two-step metal deposition and oxidation by molecular beam epitaxy, and backscattered diffraction confirms a dominant (111) surface orientation. We detail the growth of a bimodal size distribution that facilitates good surface coverage (80%) while allowing a significant reduction in In2O3 refractive index. This unique dispersion offers excellent surface coverage and three-dimensional volumetric expansion compared to a thin film, and a step reduction in refractive index compared to bulk active materials or randomly porous composites, to more closely match the refractive index of an electrolyte, improving transparency. The (111) surface orientation of the nanodots, when fully ripened, allows minimum lattice mismatch strain between the In2O3 and the Si surface. This helps to circumvent potential interfacial weakening caused by volume contraction due to electrochemical reduction to lithium, or expansion during lithiation. Cycling under potentiodynamic conditions shows that the transparent anode of nanodots reversibly alloys lithium with good Coulombic efficiency, buffered by co-insertion into the silicon substrate. These properties could potentially lead to further development of similarly controlled dispersions of a range of other active materials to give transparent battery electrodes or materials capable of non-destructive in situ spectroscopic characterization during charging and discharging.

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In the present work, electrochemically reduced-graphene oxide/cobalt oxide composites for charge storage electrodes were prepared by a one-step pulsed electrodeposition route on stainless steel current collectors and after that submitted to a thermal treatment at 200 degrees C. A detailed physico-chemical characterization was performed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy. The electrochemical response of the composite electrodes was studied by cyclic voltammetry and charge-discharge curves and related to the morphological and phase composition changes induced by the thermal treatment. The results revealed that the composites were promising materials for charge storage electrodes for application in redox supercapacitors, attaining specific capacitances around 430 F g(-1) at 1 A g(-1) and presenting long-term cycling stability. (C) 2016 Elsevier B.V. All rights reserved.

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Dissolvable, size- and shape-controlled ruthenium dioxide nanoparticles are successfully achieved through a two-phase route. The influence of reaction time, temperature, and monomer concentration and the nature of capping agents on the morphologies of nanoparticles are studied through transmission electron microscopy (TEM). A possible mechanism for the formation and growth of nanoparticles is also involved. X-ray powder diffraction (XRD) confirms the amorphous structure for as-prepared ruthenium dioxide nanoparticles. Samples are immobilized by simple dip-coating on a current collector, and the cyclic voltammetry measurement is utilized to investigate their electrochemical properties. The specific capacitance of one sample can teach as high as 840 F g(-1), which reveals the promising application potential to electrochemical capacitors.