Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
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2013
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Resumo |
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics. |
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application/pdf |
Identificador | |
Publicador |
Nature Publishing Group |
Relação |
http://eprints.qut.edu.au/75269/1/Nonvolatile_multilevel_data_storage_memory_device_from_controlled_ambipolar_charge_trapping_mechanism.pdf http://www.nature.com/srep/2013/130731/srep02319/full/srep02319.html?WT.ec_id=SREP-20130806 DOI:10.1038/srep02319 Zhou, Y., Han, S. T., Sonar, P., & Roy, V. A. L. (2013) Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Scientific Reports, 3(2319). |
Direitos |
Copyright 2013 The authors This work is licensed under a Creative Commons Attribution- NonCommercial-NoDerivs 3.0 Unported license. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0 |
Fonte |
Science & Engineering Faculty |
Palavras-Chave | #polymer #article #chemistry #data storage device #equipment design #equipment failure #information retrieval #materials testing #methodology #semiconductor #static electricity #Computer Storage Devices #Equipment Failure Analysis #Information Storage and Retrieval #Polymers #Semiconductors |
Tipo |
Journal Article |